onsemi N-Channel MOSFET, 75 A, 650 V Enhancement, 3-Pin TO-247 Package NTH027N65S3F-F155

onsemi NTH027N65S3F-F155 is a high-performance N-Channel MOSFET designed for efficient power switching applications. It features a maximum continuous drain current of 75 amperes and a maximum drain-source voltage rating of 650 volts. Packaged in a robust TO-247 through-hole format, this MOSFET supports high power dissipation up to 595 watts, making it suitable for demanding industrial and electronic use cases.

The device operates in enhancement mode, enabling efficient switching and low conduction losses due to its low maximum drain-source resistance of 27.4 milliohms. It supports a maximum gate-source voltage of 30 volts and has a typical gate charge of 259 nanocoulombs, facilitating effective gate drive control.

Designed to withstand a wide range of operating temperatures from -55°C to 150°C, this MOSFET is ideal for heavy-duty environments including industrial power supplies, motor control, and voltage regulation. The TO-247 package ensures mechanical durability and ease of mounting on circuit boards for through-hole applications.

Dimensionally compact with a length of 15.87 mm, width of 4.82 mm, and height of 20.82 mm, it facilitates space-efficient designs. The device’s forward voltage rating of 1.3 volts enables efficient conduction behavior.

Supports a continuous drain current of 75 amperes for high current applications. Rated for a maximum drain-source voltage of 650 volts ensuring robust operation. Equipped with an enhancement mode channel for efficient switching performance.

Features a low maximum drain-source resistance of 27.4 milliohms to reduce power loss. Offers a maximum power dissipation of 595 watts for high power handling. Designed with a TO-247 through-hole package providing mechanical strength and ease of mounting.

Supports a maximum gate-source voltage of 30 volts for safe gate control. Operates reliably in temperatures ranging from -55°C to 150°C suitable for industrial environments. Compact dimensions with length 15.87 mm, width 4.82 mm, and height 20.82 mm.

Provides a typical gate charge of 259 nanocoulombs at Vgs for efficient gate drive.

This MOSFET is applicable in industrial, manufacturing, and power management scenarios requiring reliable, high-current semiconductor switching. It is ideal for use in motor drives, power supplies, and other electronics requiring efficient heat dissipation and robust electrical performance.

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