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onsemi SuperFET II N-Channel MOSFET 17 A 650 V Enhancement 3-Pin TO-220 FCP190N65S3
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 16.3mm |
| Length | 10.67mm |
| Model | FCP190N65S3 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | SuperFET II |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 190mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 144W |
| Typical Gate Charge Qg @ Vgs | 33nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
| Internal Gate Resistance | 7.0 ohm |
Key Features
- The 3-pin TO-220 package ensures easy mounting and heat dissipation.
- SuperFET II technology minimizes conduction loss for enhanced efficiency.
- Maximum power dissipation is rated at 144 W for robust thermal handling.
- Typical gate charge of 33 nC reduces switching losses effectively.
- Operating temperature range from -55°C to 150°C supports demanding environments.
- Low on-resistance of 190 mΩ improves current handling and energy efficiency.
- Internal gate resistance of 7.0 ohms stabilizes switching and reduces noise.
- Forward voltage drop is 1.2 V ensuring low conduction losses.
Product Description
onsemi FCP190N65S3 is a SuperFET II N-Channel MOSFET engineered for high voltage and current power switching applications. It supports a continuous drain current up to 17 amperes and withstands up to 650 volts across the drain-source terminals, packaged in a reliable 3-pin TO-220 format suited for through-hole mounting.
This MOSFET utilizes advanced SuperFET II charge balance technology that significantly reduces conduction and switching losses, enabling improved system efficiency and miniaturization in industrial power electronics.
Operating temperatures range from -55°C to 150°C, allowing use in harsh environments. The device features a maximum power dissipation of 144 watts, supporting heavy load conditions. Its typical gate charge of 33 nC and low effective output capacitance contribute to superior switching performance, limiting power losses during operation.
The SuperFET II design incorporates internal gate resistance of 7.0 ohms to reduce voltage oscillations during switching events, enhancing reliability and noise performance. The typical forward voltage is 1.2 V, representing efficient conduction at nominal operational currents.
The 3-pin TO-220 package facilitates simple through-hole mounting and effective thermal dissipation. Low Rds(on) of 190 milliohms reduces conduction losses and enhances current capacity. Wide operational temperature range for industrial and commercial electronic power systems.
SuperFET II technology minimizes switching losses for power-efficient designs. Robust maximum power dissipation rating supports demanding applications. Internal gate resistance improves switching stability and reduces electromagnetic interference.
Designed for use in power management, automotive electronics, and energy conversion systems. Manufactured in China, ensuring quality control and consistent performance. This MOSFET is ideal for industrial, automotive, HVAC, manufacturing, and power supply applications requiring efficient, high voltage switching components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 17 amperes.
This MOSFET has a maximum drain-source voltage rating of 650 volts.
It supports a maximum power dissipation of 144 watts, suitable for heavy load conditions.
The typical gate charge is 33 nanocoulombs, which helps in reducing switching losses.
The operating temperature range is from -55°C to 150°C, allowing for use in harsh environments.
It is packaged in a 3-pin TO-220 format, which facilitates through-hole mounting and effective thermal dissipation.
The internal gate resistance is 7.0 ohms, which stabilizes switching and reduces noise.
The forward voltage drop is 1.2 volts, ensuring low conduction losses during operation.
It has a low on-resistance of 190 milliohms, which improves current handling and energy efficiency.
This MOSFET is designed for power management, automotive electronics, and energy conversion systems.
It is manufactured in China, ensuring quality control and consistent performance.
This model features an N-channel type, suitable for enhancement mode applications.
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