onsemi Dual N-Channel Power MOSFET, 84 A, 40 V, Enhancement Mode, 8-Pin DFN Package NVMFD5C462NLWFT1G

onsemi NVMFD5C462NLWFT1G is a dual N-channel power MOSFET designed for compact and efficient automotive and industrial electronic circuits. It operates at a maximum drain current of 84 A and voltage of 40 V, housed in a small footprint 8-pin DFN (Dual Flat No-Lead) package measuring 5.1 mm width, 6.1 mm length, and 1.05 mm height. This MOSFET uses enhancement mode channel technology to provide low on-resistance and fast switching, resulting in minimized conduction and driver losses.

The device supports a maximum power dissipation of 50 W and is rated for operation in harsh environments, with temperatures from -55°C up to 175°C, making it suitable for demanding industrial and automotive applications. It complies with automotive standard AEC-Q101 for increased reliability. Key features include a low max drain-source resistance of 7.7 milliohms, typical gate charge of 23 nanocoulombs at 23 V gate voltage, and a maximum gate-source voltage rating of ±20 V. The transistor configuration is dual, containing 2 elements per chip to optimize design integration.

This MOSFET is often used in solenoid drivers, low side and high side drivers, automotive engine control units, and antilock braking systems, where efficient power switching and compact packaging are critical. Its wettable flank option supports enhanced optical inspection, improving production quality assurance. The device is a part of the NVMFD5C462NL series, recognized for high thermal performance and PPAP capability.

This dual MOSFET has a maximum continuous drain current of 84 A. Rated for maximum drain-source voltage of 40 V for robust performance. Constructed in a compact 8-pin DFN surface-mount package measuring 5.1 x 6.1 x 1.05 mm.

Designed with enhancement mode channel for improved switching operation. Offers very low drain-source resistance of 7.7 milliohms to minimize conduction losses. Supports maximum power dissipation of 50 W to handle demanding loads.

Operates in extreme temperature ranges from -55°C to 175°C. Capable of fast switching with typical gate charge of 23 nC at 23 V gate voltage. Built to comply with automotive standard AEC-Q101 ensuring reliability in vehicle environments.

Ideal for solenoid drivers, engine controllers, low/high side drivers, and antilock braking systems. Explore the full range of discrete semiconductors and MOSFETs on EnvMart to find solutions optimized for your industrial, automotive, and commercial electronic design needs.