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onsemi N-Channel MOSFET 51 A, 30 V Enhancement Mode, 6-Pin DFN Package NVMFS4C310N
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.05mm |
| Length | 6.1mm |
| Model | NVMFS4C310N |
| Width | 5.1mm |
| Mount Type | Surface |
| Series | NVMFS4C310N |
| Maximum Operating Temperature | 175°C |
| Package Type | DFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 51A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 32W |
| Typical Gate Charge Qg @ Vgs | 9.7nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 800mV |
Key Features
- High current capacity of 51 amperes ensures robust performance.
- Maximum drain-source voltage rating of 30 volts for reliable operation.
- Low on-resistance of 9 milliohms to minimize conduction losses.
- Optimized gate charge of 9.7 nanocoulombs for efficient switching.
- Surface mount package in a compact 6-pin DFN form factor.
- Maximum power dissipation rating of 32 watts for thermal reliability.
- Wide operating temperature range from -55°C up to 175°C.
- Enhanced mode N-channel MOSFET designed for low capacitance.
Product Description
onsemi NVMFS4C310N is a high-performance N-Channel MOSFET designed for power switching and amplification in electronic applications. Featuring a maximum continuous drain current of 51 amperes and drain-source voltage rating of 30 volts, this device supports robust handling of high power loads.
The transistor is housed in a compact 6-pin DFN surface mount package measuring 6.1 mm in length, 5.1 mm width, and 1.05 mm in height, enabling space-efficient PCB designs. Its low on-resistance value of 9 milliohms significantly reduces conduction losses, improving overall system efficiency.
With an optimized gate charge of 9.7 nanocoulombs, the device minimizes switching losses, making it suitable for high-frequency switching applications. It operates safely under gate-source voltages up to 20 volts and can dissipate up to 32 watts of power continuously.
The component is rated for operation in extreme temperature conditions ranging from -55°C to 175°C, ensuring reliability in industrial, automotive, and harsh environments. Conforming to the automotive AEC-Q101 standard, the NVMFS4C310N assures high quality and durability for automotive and critical applications.
This enhancement mode MOSFET features low capacitance, aiding driver efficiency and switching speed. Its wettable flanks option enhances optical inspection during manufacturing, improving yield and quality control.
High current capacity supports demanding electrical loads. Low on-resistance reduces energy loss and heat generation. Compact DFN package for efficient PCB layout. Wide temperature range for versatile industrial use. Automotive standard certification for reliability assurance.
Optimized gate charge for reduced switching losses. High power dissipation capability improves thermal management. Surface mount type facilitates automated assembly. Enhancement mode operation suited for power electronics.
Wettable flanks option for superior optical inspection.
Suitable for industrial, automotive, power management, and general electronic applications, the onsemi NVMFS4C310N contributes to efficient, reliable power switching solutions. Explore our Electronics & Electricals category for additional semiconductor products tailored to your design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 51 amperes.
The maximum drain-source voltage rating is 30 volts.
It has a low on-resistance value of 9 milliohms, which helps minimize conduction losses.
The optimized gate charge is 9.7 nanocoulombs, allowing for efficient switching.
The DFN package measures 6.1 mm in length, 5.1 mm in width, and 1.05 mm in height.
The maximum power dissipation rating is 32 watts, ensuring thermal reliability during operation.
It operates within a wide temperature range from -55°C to 175°C.
This model conforms to the automotive AEC-Q101 standard, ensuring high quality for automotive applications.
It uses a surface mount type, facilitating automated assembly.
The maximum gate-source voltage for this model is 20 volts.
The country of origin for this MOSFET is India.
This MOSFET is suitable for industrial, automotive, power management, and general electronic applications.
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