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onsemi N-Channel MOSFET, 68 A, 80 V Enhancement, 8-Pin WDFN Package NVTFS6H850NTAG
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 750μm |
| Length | 3.15mm |
| Model | NVTFS6H850NTAG |
| Width | 3.15mm |
| Mount Type | Surface |
| Series | NVTFS6H850N |
| Maximum Operating Temperature | 175°C |
| Package Type | WDFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 68A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 9.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 107W |
| Typical Gate Charge Qg @ Vgs | 19nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 800mV |
Key Features
- Designed for automotive applications with AEC-Q101 standard compliance.
- Maximum power dissipation of 107 W ensures reliable operation under high load.
- Low drain-source resistance of 9.5 mΩ minimizes conduction losses.
- Compact footprint with 3.15 mm length and width for space-efficient designs.
- Supports a wide operating temperature range from -55°C to 175°C for durability.
- Typical gate charge of 19 nC reduces driver losses in switching applications.
- Maximum gate-source voltage of 20 V enhances device robustness.
- Wettable Flank option available for enhanced optical inspection during manufacturing.
Product Description
onsemi NVTFS6H850NTAG is an automotive power N-Channel MOSFET designed to deliver high efficiency and performance in compact electronic designs. Featuring a maximum continuous drain current of 68 A and a maximum drain-source voltage of 80 V, this enhancement mode MOSFET operates reliably in demanding environments.
The device is housed in a compact 8-pin WDFN package measuring 3.15 mm by 3.15 mm with a height of 750 μm, enabling efficient PCB space utilization. It supports surface mounting and meets the AEC-Q101 automotive standard, making it ideal for automotive engine controllers, antilock braking systems, and solenoid drivers.
The maximum power dissipation rating of 107 W and low drain-source resistance of 9.5 mΩ reduce conduction and thermal losses, improving overall energy efficiency. A typical gate charge of 19 nC minimizes driver power consumption during switching events. The MOSFET further supports wettable flank technology for enhanced optical inspection and is compliant with PPAP (Production Part Approval Process) suitable for automotive quality assurance.
Operating over a wide temperature range of -55°C to 175°C, the NVTFS6H850NTAG ensures durability and stable performance in harsh industrial and automotive conditions. Its maximum gate-source voltage of 20 V and forward voltage of 800 mV enable robust control and fast switching in low- and high-side driver applications.
Designed for solenoid drivers and automotive engine control units. Compact size supports space-constrained electronic systems. Wettable Flank technology facilitates quality inspection in manufacturing. Low conduction and driver losses enhance efficiency.
AEC-Q101 certified for automotive reliability and quality. Wide operating temperature range suitable for industrial and automotive environments. Production Part Approval Process (PPAP) capable quality standard.
This MOSFET is a reliable choice for use in industrial, automotive control, and HVAC applications requiring robust power switching and control solutions. Explore further options and technical documents in the MOSFET category at EnvMart for your power semiconductor needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 68 A.
This MOSFET has a maximum drain-source voltage rating of 80 V.
The maximum power dissipation for the NVTFS6H850NTAG is 107 W.
It features a low drain-source resistance of 9.5 mΩ.
The typical gate charge is 19 nC.
It supports a wide operating temperature range from -55°C to 175°C.
This model supports surface mounting.
The dimensions are 3.15 mm in length and width, with a height of 750 μm.
It complies with the AEC-Q101 automotive standard.
This model is designed for automotive engine controllers, antilock braking systems, and solenoid drivers.
The maximum gate-source voltage is 20 V.
The forward voltage is 800 mV.
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