onsemi P-Channel MOSFET 30 V, 11.4 A, 2.5 W Power Dissipation, 8-Pin SOIC NTMS4177PR2G

onsemi NTMS4177PR2G is a high-quality P-Channel MOSFET designed for electronic power and control applications. With a maximum continuous drain current of 11.4 A and a drain-source voltage rating of 30 V, this transistor provides reliable switching and amplification capabilities in a compact 8-pin SOIC surface mount package.

The enhancement mode device features a low drain-source resistance of 19 milliohms, which minimizes power loss during conduction, improving overall efficiency in circuits. It supports a maximum power dissipation of 2.5 W, making it suitable for medium-power electronic designs.

The transistor operates effectively across a wide temperature range from -55°C to 150°C, ensuring durability in demanding industrial environments such as power management systems, automotive electronics, and industrial automation.

Its gate characteristic includes a typical gate charge of 29 nanocoulombs at the standard gate-source voltage, facilitating fast switching speeds and reducing switching losses. Additionally, the device's robust gate-source voltage tolerance from -20 V to +20 V protects against voltage spikes during operation.

The physical footprint with dimensions of 5 mm length, 4 mm width, and 1.5 mm height supports compact PCB layouts without sacrificing electrical performance. The device is RoHS compliant, and while no automotive certification is provided, it meets industrial standards for semiconductor devices.

Designed for surface mount applications with an SOIC package type. Maximum power dissipation of 2.5 W allows reliable performance under load. Features enhancement mode operation for efficient switching. Offers low drain-source resistance of 19 milliohms for minimal conduction losses.

Operates in temperature range from -55°C to 150°C for versatile applications. Typical gate charge is 29 nanocoulombs at specified gate voltage, enabling fast switching. Gate-source voltage tolerance up to -20 V to +20 V ensures operational safety.

Compact dimensions: length 5 mm, width 4 mm, height 1.5 mm suitable for dense PCB layouts.

This onsemi MOSFET is ideal for use in electronic circuits requiring efficient power control, switching applications, and signal amplification within industrial, automotive, and manufacturing sectors. Its compact SOIC package facilitates integration into tightly packed electronics assemblies.

Explore the wide range of MOSFETs and semiconductor components available on EnvMart to find the optimized solution for your electronic design needs.