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onsemi P-Channel MOSFET 20 V, 1.37 A, Enhancement Mode, Surface Mount 3-Pin SC-70 NTS4101PT1G

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onsemi P-Channel MOSFET 20 V, 1.37 A, Enhancement Mode, Surface Mount 3-Pin SC-70 NTS4101PT1G

Name: onsemi P-Channel MOSFET 20 V, 1.37 A, Enhancement Mode, Surface Mount 3-Pin SC-70 NTS4101PT1G
Brand: onsemi
SKU: 233743
Price: 0.1 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	900μm
Length	2.2mm
Model	NTS4101PT1G
Width	1.35mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SC-70
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	1.37A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	160mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	329mW
Typical Gate Charge Qg @ Vgs	6.4nC
Maximum Gate Source Voltage Vgs	-8, +8V
Forward Voltage Vf	-1.2V

Key Features

Designed with enhancement mode for efficient switching operations.
Compact SC-70 package suitable for space-constrained PCB layouts.
Maximum power dissipation of 329 mW enables stable performance under load.
Wide operating temperature range from -55°C to 150°C for robust use in diverse environments.
Low typical gate charge of 6.4 nC supports fast switching speeds.
Maximum drain-source resistance of 160 mΩ for low conduction losses.
Forward voltage is typically -1.2 V optimizing power efficiency in circuits.
Maximum gate-source voltage tolerance of -8 to +8 V ensures device protection during voltage transients.

Product Description

onsemi NTS4101PT1G is a P-Channel MOSFET transistor engineered for surface mount applications with a 3-pin SC-70 package. It supports a maximum continuous drain current of 1.37 A and a maximum drain-source voltage of 20 V, making it suitable for electronic and electrical semiconductor circuits requiring efficient switching performance.

The device operates in enhancement mode, allowing precise control over conduction and switching. Its maximum power dissipation is 329 mW, which enables it to handle moderate power levels in compact designs.

Designed for reliable operation across a broad temperature range, from -55°C to 150°C, NTS4101PT1G delivers durability in demanding industrial, commercial, and automotive electronics. The package's small footprint (2.2 mm by 1.35 mm by 0.9 mm) supports high-density circuit boards and automated surface mount device assembly.

The typical gate charge of 6.4 nC reduces switching losses, and the maximum drain-source resistance of 160 mΩ minimizes conduction losses for energy-efficient operations. It tolerates gate-source voltages of up to ±8 V, protecting against voltage spikes and ensuring operational reliability.

This P-Channel MOSFET is applicable in various industrial and consumer electronics, including power management modules, switching regulators, and level shifters in embedded systems. Its surface mount design facilitates mass production and integration with modern electronics manufacturing workflows.

3-Pin SC-70 package for surface mounting. Maximum continuous drain current: 1.37 A. Drain-source voltage rating of 20 V. Enhancement channel mode for efficient switching. Typical gate charge at Vgs of 6.4 nC. Operating temperature range of -55°C to 150°C.

Size: 2.2 mm length, 1.35 mm width, 900 μm height. Maximum power dissipation of 329 mW. Explore more semiconductor and discrete electronic components in EnvMart for your industrial, laboratory, and commercial application needs.