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onsemi Isolated 2 N-Channel Small Signal MOSFET, 250 mA, 30 V, Enhancement Mode, 6-Pin SC-88 Package NTJD4001NT1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 2.2mm |
| Model | NTJD4001NT1G |
| Width | 1.35mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SC-88 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 250mA |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 2.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.72W |
| Typical Gate Charge Qg @ Vgs | 0.9nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.65V |
| Transistor Configuration | Isolated |
Key Features
- Maximum continuous drain current of 250 mA ensures efficient current handling.
- Maximum drain-source voltage rated at 30 V for reliable performance.
- Enhancement mode channel provides effective switching capability.
- 6-pin SC-88 surface mount package facilitates compact PCB layout.
- Low maximum drain-source resistance of 2.5 ohms reduces conduction losses.
- Wide operating temperature range from -55°C to +150°C suits harsh environments.
- Typical gate charge of 0.9 nC at Vgs indicates fast switching capability.
- Complies with automotive standard AEC-Q101 for quality assurance.
Product Description
onsemi NTJD4001NT1G Isolated 2 N-Channel Small Signal MOSFET offers a dual transistor configuration for precise electronic circuit control. This device operates with a maximum continuous drain current of 250 mA and a maximum drain-source voltage of 30 V, making it suitable for low-power switching applications.
The enhancement mode channel and low maximum drain-source resistance of 2.5 Ω contribute to efficient switching and low energy loss. Packaged in a compact 6-pin SC-88 surface mount format, it supports dense PCB designs and automated assembly processes.
Designed to operate over a wide temperature range from -55°C to +150°C and compliant with the automotive AEC-Q101 standard, this MOSFET is well-suited for automotive, industrial, and general electronic circuits requiring reliability under harsh conditions.
The typical gate charge of 0.9 nC at the gate-source voltage indicates rapid switching capabilities for improved operational speed. The forward voltage of 0.65 V helps maintain low power dissipation during conduction.
Applications for this device include signal processing, amplification, and switching in consumer electronics, automotive controls, and industrial equipment. The dual N-channel transistor elements allow flexible design integration within compact electronic modules.
Maximum continuous drain current: 250 mA. Maximum drain-source voltage: 30 V. Package: 6-pin SC-88 surface mount. Operating temperature range: -55°C to +150°C. Low drain-source resistance of 2.5 Ω. Typical gate charge: 0.9 nC at Vgs.
Automotive standard compliance: AEC-Q101. Forward voltage: 0.65 V. Dual transistor configuration. Explore more components and semiconductor solutions with onsemi products on EnvMart.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 250 mA.
The maximum drain-source voltage rated for this MOSFET is 30 V.
It is packaged in a 6-pin SC-88 surface mount format.
This model operates over a wide temperature range from -55°C to +150°C.
The typical gate charge at gate-source voltage (Vgs) is 0.9 nC.
The maximum drain-source resistance for this model is 2.5 ohms.
It complies with the automotive standard AEC-Q101 for quality assurance.
The forward voltage for this MOSFET is 0.65 V.
This device features a dual transistor configuration, with 2 elements per chip.
The package dimensions are as follows: height is 1 mm, width is 1.35 mm, and length is 2.2 mm.
The maximum power dissipation for the NTJD4001NT1G is 2.72 W.
It uses an enhancement mode N-channel configuration.
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