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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 800μm |
| Length | 1.65mm |
| Model | NTA4151PT1G |
| Width | 900μm |
| Mount Type | Surface |
| Series | NTA |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-75 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 760mA |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 1Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300mW |
| Typical Gate Charge Qg @ Vgs | 2.1nC |
| Maximum Gate Source Voltage Vgs | -6, +6V |
| Forward Voltage Vf | -1.1V |
onsemi NTA4151PT1G P-Channel MOSFET is a discrete semiconductor designed for low power switching applications. This device supports continuous drain current up to 760 mA and a maximum drain-source voltage of 20 V in a compact 3-pin SC-75 package, suitable for surface mounting.
Its enhancement channel mode ensures efficient operation with a maximum drain-source resistance of 1 ohm, minimizing conduction losses. The MOSFET can safely dissipate 300 mW of power, making it appropriate for circuit designs that demand reliable switching at low power levels.
Operating temperature ranges from -55°C to 150°C, enabling usage in diverse industrial and electronic environments. With a typical gate charge of 2.1 nC at gate-source voltage, switching times are optimized for performance efficiency. The device also features a maximum gate-source voltage rating of -6 V to +6 V for operational protection.
Compact size with dimensions approximately 1.65 mm length, 900 μm width, and 800 μm height allows for space-efficient PCB designs, commonly applied in automotive electronics, industrial control systems, consumer electronics, and other semiconductor-related applications.
Supports maximum continuous drain current of 760 mA. Operates at maximum drain-source voltage of 20 V. Designed with enhancement mode channel for efficient switching. Compact surface-mount SC-75 package with 3 pins. Maximum drain-source resistance of 1 ohm ensures low conduction losses.
Can dissipate up to 300 mW power safely. Wide operating temperature range from -55°C to 150°C. Typical gate charge of 2.1 nC at Vgs improves switching performance. Maximum gate-source voltage of -6 to +6 V for protection.
Dimensions approximately 1.65 mm length, 900 μm width, and 800 μm height.
This onsemi MOSFET is a vital component in power management and switching electronic circuits across various industries including electronics manufacturing, automotive electronics, industrial automation, and communications equipment.
Explore more in the MOSFET category or browse onsemi products for robust semiconductor devices suited for your industrial and electronic design needs.
Interested in this product? Drop us an email and we will let you know when it's available for order.
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