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onsemi 5-Element Bi-Directional ESD Protection Array, 2 kW, 8-Pin SOIC LC03-6R2G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | LC03-6R2G |
| Width | 4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 5 |
| Clamping Voltage VC | 20V |
| Diode Configuration | Complex Array |
| Direction Type | Bi-Directional |
| Minimum Breakdown Voltage Vbr | 6.8V |
| Maximum Reverse Stand-off Voltage Vwm | 5V |
| Peak Pulse Power Dissipation Pppm | 2kW |
| Test Current It | 1mA |
| Maximum Peak Pulse Current Ippm | 100A |
| Maximum Reverse Leakage Current | 20μA |
Key Features
- Bi-Directional diode configuration ensures effective protection against voltage spikes in both directions.
- Complex array design integrates 5 elements per chip for optimized protection.
- Minimum breakdown voltage of 6.8 V allows precise triggering under transient conditions.
- Compact surface mount SOIC package with 8 pins suits high-density PCB designs.
- Maximum reverse stand-off voltage rated at 5 V for reliable operating thresholds.
- Peak pulse power dissipation capacity is 2 kW, suitable for high energy transient events.
- Clamping voltage of 20 V prevents damage by limiting voltage overshoots.
- Wide operating temperature range from -55°C to 150°C for diverse environmental applications.
Product Description
onsemi LC03-6R2G is a 5-element bi-directional ESD protection array designed for safeguarding sensitive electronic circuits from electrostatic discharge and transient voltage spikes. Housed in a compact 8-pin SOIC surface mount package, it features a complex diode array configuration capable of handling peak pulse power dissipation up to 2 kW, making it ideal for industrial and consumer electronics applications requiring robust surge protection.
This device operates effectively within a wide temperature range of -55°C to 150°C, maintaining reliable performance even in harsh environmental conditions. Its minimum breakdown voltage of 6.8 V and maximum reverse stand-off voltage of 5 V ensure precise protection activation thresholds, effectively clamping voltage spikes up to 20 V to prevent damage to downstream components.
The LC03-6R2G supports a peak pulse current of 100 A and maintains low reverse leakage current of 20 μA, contributing to efficient power management. Its compact dimensions (5 mm length, 4 mm width, 1.5 mm height) allow integration into space-constrained printed circuit boards.
This ESD protection array is typically used in industrial electronics, computing devices, telecommunications equipment, and automotive electronic systems where transient voltage suppression is critical for operational reliability and safety.
Key technical features include a surface mount SOIC package, 8-pin configuration, and an integrated array of five protective elements that provide comprehensive bi-directional protection against transient voltage threats.
Bi-Directional diode configuration for dual polarity transient voltage protection. Complex 5-element array ensures enhanced ESD robustness. High peak pulse power dissipation of 2 kW for demanding surge environments. Wide operating temperature range for versatility in application environments.
Compact SOIC package facilitates easy PCB layout and assembly.
This product is suitable for use in semiconductor electronic components manufacturing, industrial automation, and electrical equipment prone to voltage transients and ESD hazards. Explore more semiconductor surge protection devices in the Electronics & Electricals category at EnvMart.
Explore more products in our ESD Protection Diode category.
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Frequently Asked Questions
The peak pulse power dissipation capacity is 2 kW, making it suitable for high energy transient events.
The clamping voltage is rated at 20 V, which helps prevent damage by limiting voltage overshoots.
The minimum breakdown voltage is 6.8 V, allowing for precise triggering under transient conditions.
The maximum reverse stand-off voltage is rated at 5 V, ensuring reliable operating thresholds.
It operates effectively within a wide temperature range from -55°C to 150°C, suitable for diverse environmental applications.
The dimensions are 5 mm in length, 4 mm in width, and 1.5 mm in height, allowing for integration into space-constrained PCBs.
This model features a complex array design with 5 elements per chip for optimized protection.
The maximum peak pulse current is rated at 100 A, contributing to efficient power management.
It comes in a compact 8-pin SOIC surface mount package, suitable for high-density PCB designs.
The maximum reverse leakage current is 20 μA, which aids in maintaining efficient operation.
It is typically used in industrial electronics, computing devices, telecommunications equipment, and automotive electronic systems where transient voltage suppression is critical.
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