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onsemi Isolated PowerTrench 2 N-Channel MOSFET, 6 A, 30 V Enhancement Mode, 8-Pin SOIC FDS6912A

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.5mm
Length 5mm
Model FDS6912A
Width 4mm
Mount Type Surface
Series PowerTrench
Maximum Operating Temperature 150°C
Package Type SOIC
Minimum Operating Temperature -55°C
Pin Count 8
Number of Elements per Chip 2
Channel Type N
Maximum Continuous Drain Current Id 6A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 44mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.6W
Typical Gate Charge Qg @ Vgs 5.8nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 0.75V
Transistor Configuration Isolated

Key Features

  • PowerTrench technology offers low gate charge and soft reverse recovery body diode for fast switching.
  • Dual isolated N-channel MOSFET configuration suitable for synchronous rectification.
  • Package type is 8-Pin SOIC designed for surface mounting.
  • Maximum drain-source resistance is 44 milliohms ensuring low conduction losses.
  • Typical gate charge at 5.8 nC enables efficient gate drive control.
  • Operating temperature range extends from -55°C to 150°C for industrial applications.
  • Maximum power dissipation of 1.6 W supports thermal management in compact circuits.
  • Forward voltage drop of 0.75 V contributes to high efficiency.

Product Description

onsemi FDS6912A Isolated PowerTrench 2 N-Channel MOSFET is a specialized semiconductor transistor designed for efficient power management in electronic circuits. It supports a maximum continuous drain current of 6 Amperes and a maximum drain-source voltage of 30 Volts. Encapsulated in an 8-pin SOIC surface-mount package, this device offers reliable electrical performance with a low drain-source resistance of 44 milliohms, minimizing conduction losses.

This PowerTrench MOSFET incorporates a soft reverse recovery body diode that eliminates the need for external snubber circuits and allows for fast switching in synchronous rectification applications typically found in AC/DC power supplies. It delivers a typical gate charge of 5.8 nanocoulombs, facilitating low power gate drive requirements.

The device operates efficiently within a wide temperature range from -55°C up to 150°C, making it suitable for harsh industrial, manufacturing, and electronic applications. With a maximum power dissipation of 1.6 Watts, it supports compact and thermally managed designs.

Mechanical dimensions are compact with a length of 5 mm, width of 4 mm, and height of 1.5 mm, making it ideal for space-constrained PCB layouts. The transistor configuration is isolated with two elements per chip to enhance performance and reliability.

PowerTrench technology ensures increased efficiency and system power density. Soft body diode enhances switching performance and system simplification. Suitable for industrial, manufacturing, consumer electronics, and power management applications.

Surface mount package allows automated assembly and high-density mounting. Operating voltage and current ratings fit medium power applications. Robust temperature handling extends device reliability in demanding environments.

Compact footprint for high component density circuit boards. Ideal for synchronous rectification in AC/DC power supplies, battery management, and motor drives. Package and pin count designed for standard PCB mounting processes.

Eliminates need for additional snubber components, reducing external parts count.

This product is supplied new and sourced from India. It is recommended for engineers and designers working in power electronics, semiconductors, and embedded circuit applications. Explore more onsemi semiconductor components in the EnvMart Electronics & Electricals category for quality and reliability.

onsemi Isolated PowerTrench 2 N-Channel MOSFET, 6 A, 30 V Enhancement Mode, 8-Pin SOIC FDS6912A
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Frequently Asked Questions

The maximum continuous drain current for this model is 6 Amperes.

This MOSFET has a maximum drain-source voltage rating of 30 Volts.

The typical gate charge at 5.8 nanocoulombs enables efficient gate drive control for this unit.

It operates efficiently within a temperature range of -55°C to 150°C.

The maximum power dissipation for this MOSFET is 1.6 Watts, supporting thermal management in compact circuits.

The dimensions of this MOSFET are 5 mm in length, 4 mm in width, and 1.5 mm in height.

This model is packaged in an 8-pin SOIC surface-mount package, designed for high-density mounting.

The maximum drain-source resistance is 44 milliohms, ensuring low conduction losses.

This model features an isolated configuration with two elements per chip, enhancing performance and reliability.

It is suitable for synchronous rectification in AC/DC power supplies, battery management, and motor drives.

The forward voltage drop is 0.75 Volts, contributing to high efficiency in applications.

This MOSFET has an N-channel configuration and operates in enhancement mode.

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