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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | FDD86540 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 5.2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 127W |
| Typical Gate Charge Qg @ Vgs | 65nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
onsemi FDD86540 PowerTrench N-Channel MOSFET is a high-performance transistor packaged in a 3-pin TO-252 surface mount form factor, engineered for reliable high power switching in electronic circuits.
This device supports a maximum continuous drain current of 50 A and a drain-source voltage rating of 60 V. It incorporates PowerTrench technology to achieve a very low drain-source resistance of 5.2 mΩ, which minimizes conduction losses and improves efficiency in power applications.
Designed for industrial, electronic, and power management applications, it can dissipate up to 127 W of power, making it suitable for robust thermal environments. Its operating temperature range from -55°C to 150°C ensures durability and performance under extreme conditions.
The FDD86540 operates in enhancement mode and possesses a typical gate charge of 65 nC at the gate voltage threshold, facilitating rapid switching speeds. Its maximum gate-source voltage span of -20 V to +20 V provides electrical robustness and safe gate control.
Compact dimensions of 6.73 mm length, 6.22 mm width, and 2.39 mm height allow easy integration on densely packed circuit boards. The forward voltage of 1.2 V supports efficient conduction when the transistor is active.
This MOSFET uses PowerTrench technology for enhanced performance. Maximum continuous drain current of 50 A supports high power delivery. Drain-source voltage rated at 60 V enables medium voltage applications. Compact 3-pin TO-252 surface mount package for easy PCB integration.
Power dissipation up to 127 W supports demanding thermal conditions. Low Rds(on) of 5.2 milliohms reduces energy loss and heat. Enhancement mode operation ensures stable switching. Wide temperature operating range -55°C to 150°C ensures reliability.
Fast switching enabled by typical gate charge of 65 nC. Gate-source voltage tolerance from -20 V to +20 V for safe operation. Forward voltage of 1.2 V optimizes conduction efficiency.
This MOSFET is ideal for use in industrial electronics, power supply design, automotive electronics (non-automotive certified), and various control systems requiring efficient switching components.
Explore onsemi power semiconductor products and related categories on EnvMart for advanced electronic solutions.
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