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onsemi PowerTrench N-Channel MOSFET 60 V 50 A Enhancement Mode 3-Pin TO-252 FDD86540

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.39mm
Length 6.73mm
Model FDD86540
Width 6.22mm
Mount Type Surface
Series PowerTrench
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 50A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 5.2mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 127W
Typical Gate Charge Qg @ Vgs 65nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • This MOSFET features a PowerTrench technology enhancing conduction efficiency.
  • It supports a maximum continuous drain current of 50 A for high power operations.
  • Operates at a maximum drain-source voltage of 60 V, suitable for medium voltage applications.
  • Mounted on a compact and durable 3-pin TO-252 surface-mount package.
  • Maximum power dissipation is 127 W enabling it to handle significant thermal loads.
  • Low on-resistance of 5.2 milliohms reduces power losses and heat generation.
  • Has an enhancement mode channel for reliable switching performance.
  • The device operates in temperatures ranging from -55°C to 150°C.

Product Description

onsemi FDD86540 PowerTrench N-Channel MOSFET is a high-performance transistor packaged in a 3-pin TO-252 surface mount form factor, engineered for reliable high power switching in electronic circuits.

This device supports a maximum continuous drain current of 50 A and a drain-source voltage rating of 60 V. It incorporates PowerTrench technology to achieve a very low drain-source resistance of 5.2 mΩ, which minimizes conduction losses and improves efficiency in power applications.

Designed for industrial, electronic, and power management applications, it can dissipate up to 127 W of power, making it suitable for robust thermal environments. Its operating temperature range from -55°C to 150°C ensures durability and performance under extreme conditions.

The FDD86540 operates in enhancement mode and possesses a typical gate charge of 65 nC at the gate voltage threshold, facilitating rapid switching speeds. Its maximum gate-source voltage span of -20 V to +20 V provides electrical robustness and safe gate control.

Compact dimensions of 6.73 mm length, 6.22 mm width, and 2.39 mm height allow easy integration on densely packed circuit boards. The forward voltage of 1.2 V supports efficient conduction when the transistor is active.

This MOSFET uses PowerTrench technology for enhanced performance. Maximum continuous drain current of 50 A supports high power delivery. Drain-source voltage rated at 60 V enables medium voltage applications. Compact 3-pin TO-252 surface mount package for easy PCB integration.

Power dissipation up to 127 W supports demanding thermal conditions. Low Rds(on) of 5.2 milliohms reduces energy loss and heat. Enhancement mode operation ensures stable switching. Wide temperature operating range -55°C to 150°C ensures reliability.

Fast switching enabled by typical gate charge of 65 nC. Gate-source voltage tolerance from -20 V to +20 V for safe operation. Forward voltage of 1.2 V optimizes conduction efficiency.

This MOSFET is ideal for use in industrial electronics, power supply design, automotive electronics (non-automotive certified), and various control systems requiring efficient switching components.

Explore onsemi power semiconductor products and related categories on EnvMart for advanced electronic solutions.

onsemi PowerTrench N-Channel MOSFET 60 V 50 A Enhancement Mode 3-Pin TO-252 FDD86540
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Frequently Asked Questions

The maximum continuous drain current for this model is 50 A, making it suitable for high power operations.

This MOSFET has a maximum drain-source voltage rating of 60 V, which is appropriate for medium voltage applications.

It can dissipate up to 127 W, allowing it to handle significant thermal loads in demanding environments.

The device features a low on-resistance of 5.2 milliohms, which helps reduce power losses and heat generation.

The operating temperature range is from -55°C to 150°C, ensuring reliable performance under extreme conditions.

The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.

This model uses an enhancement mode N-channel, which provides reliable switching performance.

The typical gate charge at the gate voltage threshold is 65 nC, facilitating rapid switching speeds.

The maximum gate-source voltage tolerance is from -20 V to +20 V, providing electrical robustness for safe gate control.

It is suitable for industrial electronics, power supply design, automotive electronics (non-automotive certified), and various control systems requiring efficient switching components.

The forward voltage is 1.2 V, which supports efficient conduction when the transistor is active.

This MOSFET has a pin count of 3, designed for surface mounting.

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