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Nexperia Dual N-Channel Trench MOSFET 180 mA 30 V Enhancement 6-Pin TSSOP NX3020NAKS,115

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Nexperia Dual N-Channel Trench MOSFET 180 mA 30 V Enhancement 6-Pin TSSOP NX3020NAKS,115

Name: Nexperia Dual N-Channel Trench MOSFET 180 mA 30 V Enhancement 6-Pin TSSOP NX3020NAKS,115
Brand: Nexperia
SKU: 230586
Price: 0.09 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	1mm
Length	2.2mm
Model	NX3020NAKS,115
Width	1.35mm
Mount Type	Surface
Series	NX3020NAKS
Maximum Operating Temperature	+150°C
Package Type	TSSOP
Minimum Operating Temperature	-55°C
Pin Count	6
Number of Elements per Chip	2
Channel Type	N
Maximum Continuous Drain Current Id	180mA
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	13Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1.1W
Typical Gate Charge Qg @ Vgs	0.26nC
Maximum Gate Source Voltage Vgs	20V
Transistor Configuration	Dual

Key Features

Dual N-channel enhancement mode MOSFET technology ensures efficient switching performance.
Maximum continuous drain current of 180 mA supports low current applications.
Low maximum drain-source resistance of 13 ohms improves power efficiency.
Compact surface mount TSSOP 6-pin package with dimensions 2.2mm length, 1.35mm width, and 1mm height.
Wide operating temperature range from -55°C to +150°C for versatile conditions.
Typical gate charge of 0.26 nC at Vgs supports fast switching speeds.
Maximum gate-source voltage rating of 20 V enhances durability and reliability.
Designed with robust ESD protection and trench MOSFET technology for performance.

Product Description

Nexperia NX3020NAKS,115 is a dual N-channel trench MOSFET designed for low-power switching and driver applications. Featuring 180 mA maximum continuous drain current and a maximum drain-source voltage of 30 V, this enhancement mode transistor is housed in a compact 6-pin TSSOP surface mount package. Its small form factor, with dimensions of 2.2mm length, 1.35mm width, and 1mm height, makes it ideal for space-constrained electronic circuits.

The device uses trench MOSFET technology to provide fast switching speeds and low gate charge of 0.26 nC at gate-source voltage, allowing for energy-efficient operation in applications demanding rapid response. It has a low maximum drain-source resistance of 13 ohms which aids in minimizing power loss during conduction.

With robust ESD protection and an operating temperature range from -55°C to +150°C, NX3020NAKS,115 ensures reliability in varied environments. The maximum gate-source voltage is rated at 20 V, providing enhanced durability against voltage spikes. This transistor is configured as a dual device with two elements per chip, enhancing flexibility in design applications.

This MOSFET is ideal for use in relay driver circuits, high-speed line drivers, low-side load switches, and general switching circuit applications within industrial, electronics manufacturing, and embedded systems domains.

The product origin is China, reflecting established manufacturing sources for reliable component quality. It is configured for surface mounting on printed circuit boards and complies with Nexperia's quality standards.

Dual N-channel enhancement mode MOSFET with fast switching capabilities. Compact 6-pin TSSOP SMD package suitable for tight PCB layouts. 180 mA continuous drain current and 30 V drain-source voltage ratings. Operating temperature range from -55°C to +150°C for wide environmental tolerances.

Low gate charge enabling efficient switching performance. Ideal for relay drivers, line drivers, low side switches, and switching circuits. Explore other semiconductor and MOSFET components in our electronics category on EnvMart for industrial, laboratory, and manufacturing uses.