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Infineon N-Channel MOSFET, 100 A, 80 V Enhancement, Surface Mount 8-Pin TDSON Package BSC030N08NS5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.49mm |
| Model | BSC030N08NS5ATMA1 |
| Width | 6.35mm |
| Mount Type | Surface |
| Series | BSC030N08NS5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 139W |
| Typical Gate Charge Qg @ Vgs | 61nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 800mV |
Key Features
- Supports operation from -55°C to 150°C for high reliability under harsh conditions.
- Low on-resistance of 3 milliohms minimizes conduction losses in power circuits.
- Maximum power dissipation rating of 139 W suitable for demanding thermal environments.
- Typical gate charge is 61 nC enabling fast switching for efficient power conversion.
- Maximum gate-source voltage of 20 V provides robust gate-drive margin.
- Forward voltage of 0.8 V influences conduction drop in low-voltage designs.
- Compact package measures 5.49 mm in length, 6.35 mm width, and 1.1 mm height.
- Ideal for high-current switch stages, synchronous rectification, motor drive, and telecom power systems.
Product Description
Infineon's BSC030N08NS5ATMA1 is a high-performance N-channel enhancement mode MOSFET designed for power electronics applications requiring high current handling and efficient switching. This device is housed in a compact 8-pin TDSON surface-mount package measuring 5.49 mm by 6.35 mm with a height of 1.1 mm, allowing for dense PCB layouts.
With a maximum continuous drain current of 100 A and a maximum drain-source voltage of 80 V, this MOSFET supports demanding electrical environments. Its low on-resistance of 3 milliohms reduces conduction losses, improving system efficiency, while the maximum power dissipation of 139 W ensures robust thermal performance.
The device operates seamlessly across a wide temperature range from -55°C to 150°C, making it suitable for industrial, automotive, and telecommunications applications subjected to temperature variations. The typical gate charge of 61 nC and maximum gate-source voltage of 20 V enable fast switching speeds with adequate driver margin.
The forward voltage drop of 0.8 V should be considered in low-voltage, high-current design calculations for accurate power loss estimation. The MOSFET is ideal for use in synchronous rectification in power converters, motor drivers requiring quick switching transitions, and load-switching in telecom power systems.
Engineers should ensure proper PCB footprint design including suitable land patterns and thermal vias to optimize heat dissipation and electrical reliability when incorporating this surface-mount device.
High current capability with 100 A continuous drain current rating. Enhanced switching efficiency due to low 3 milliohm on-resistance. Wide operational temperature range from -55°C to 150°C. Fast switching enabled by 61 nC gate charge.
Robust gate drive parameters with 20 V max gate-source voltage. Power dissipation capacity of 139 W compatible with thermal management. Compact footprint suitable for space-constrained power modules. Applications include power supplies, motor drives, and telecom power systems.
This MOSFET is a reliable choice for high-performance power switching in industrial, automotive, telecommunications, and power management applications. Browse the Electronics & Electricals and Discrete Semiconductors categories on EnvMart for compatible power devices and accessories.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A.
This MOSFET operates within a temperature range of -55°C to 150°C.
The maximum drain-source voltage for this MOSFET is 80 V.
The on-resistance of this MOSFET is 3 milliohms, which helps minimize conduction losses.
The typical gate charge for this model is 61 nC, enabling fast switching.
The maximum power dissipation rating is 139 W, suitable for demanding thermal environments.
The package dimensions are 5.49 mm in length, 6.35 mm in width, and 1.1 mm in height.
The maximum gate-source voltage is 20 V, providing a robust gate-drive margin.
This model is suitable for high-current switch stages, synchronous rectification, motor drive, and telecom power systems.
This MOSFET uses surface mounting, which is ideal for dense PCB layouts.
The forward voltage drop is 0.8 V, which influences conduction drop in low-voltage designs.
This model has a pin count of 8.
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