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Infineon IPD053N08N3GATMA1 N-Channel Power MOSFET TO-252, 90 A, 80 V, 150 W, 5-Pin Surface Mount IPD053N08N3GATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD053N08N3GATMA1 |
| Width | 7.36mm |
| Mount Type | Surface |
| Series | IPD053N08N3 G |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 5 |
| ANSI/ESD S20.20 | 2014 |
| BS EN 61340-5-1 | 2007 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 90A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 9.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 52nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- This MOSFET supports a maximum continuous drain current of 90 A.
- It features an 80 V maximum drain-source voltage rating.
- The device is optimized for low switching and conduction losses.
- The package is a 5-pin TO-252 surface mount type for compact designs.
- It has a maximum power dissipation capability of 150 W.
- Maximum gate-source voltage rating is 20 V, supporting reliable switching.
- Operating temperature ranges from -55°C to 175°C for demanding applications.
- Typical gate charge is 52 nC at Vgs, supporting efficient driving performance.
Product Description
Infineon IPD053N08N3GATMA1 is a high-performance N-Channel Power MOSFET packaged in a compact 5-pin TO-252 surface mount form factor. It boasts a maximum continuous drain current of 90 A and a maximum drain-source voltage of 80 V. Engineered with a 150 W power dissipation rating, this MOSFET supports robust power applications requiring high efficiency.
Its low Rds(on) of 9.5 mΩ combined with a typical gate charge of 52 nC enhances switching performance by minimizing losses. The device supports a maximum gate-source voltage of 20 V, ensuring reliable control during operation. With an operating temperature range from -55°C to 175°C, it is suitable for demanding industrial environments.
The MOSFET features dual-sided cooling and low parasitic inductance, which contribute to higher power density and improved thermal management. Its low profile and surface mount design allow for integration in compact electronic assemblies.
Commonly used in power management, computing voltage regulation, and industrial applications, this MOSFET delivers outstanding efficiency and longevity without compromising performance. It complies with no specific certifications but meets standard operating requirements.
This MOSFET supports a maximum continuous drain current of 90 A. It features an 80 V maximum drain-source voltage rating. The device is optimized for low switching and conduction losses. The package is a 5-pin TO-252 surface mount type for compact designs.
It has a maximum power dissipation capability of 150 W. Maximum gate-source voltage rating is 20 V, supporting reliable switching. Operating temperature ranges from -55°C to 175°C for demanding applications. Typical gate charge is 52 nC at Vgs, supporting efficient driving performance.
The device has a forward voltage of 1 V and a low Rds(on) resistance of 9.5 mΩ. Designed for dual-sided cooling and low parasitic inductance. Explore the Infineon brand and Power MOSFET category at EnvMart for more advanced semiconductor solutions.
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Frequently Asked Questions
The Infineon IPD053N08N3GATMA1 supports a maximum continuous drain current of 90 A.
This model features a maximum drain-source voltage rating of 80 V.
It has a maximum power dissipation capability of 150 W.
The maximum gate-source voltage rating for this unit is 20 V.
The operating temperature range is from -55°C to 175°C.
The typical gate charge is 52 nC at Vgs.
It is packaged in a 5-pin TO-252 surface mount type.
The dimensions are 6.73 mm in length, 7.36 mm in width, and 2.41 mm in height.
The device has a low Rds(on) resistance of 9.5 mΩ.
It is commonly used in power management, computing voltage regulation, and industrial applications.
It complies with ANSI/ESD S20.20:2014 and BS EN 61340-5-1:2007 standards.
The forward voltage is 1 V.
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