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onsemi Isolated PowerTrench 2 Type P-Channel MOSFET 1.9 A 20 V Enhancement 6-Pin SOT-23 FDC6306P
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 3mm |
| Model | FDC6306P |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.9A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 270mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 960mW |
| Typical Gate Charge Qg @ Vgs | 3nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -0.8V |
| Transistor Configuration | Isolated |
Key Features
- The MOSFET provides surface mount type and dual elements per chip for enhanced performance.
- It operates at a maximum continuous drain current of 1.9 A and drain-source voltage of 20 V.
- Maximum drain-source resistance is 270 milliohms ensuring efficient conduction.
- Designed for use with a maximum power dissipation of 960 milliwatts for reliable thermal management.
- Operating temperature range from -55°C to 150°C supports robust industrial applications.
- Typical gate charge is low at 3 nanocoulombs, improving switching efficiency.
- Features isolated transistor configuration and shielded-gate technology for improved charge balance.
- Compact dimensions of 3 mm length, 1.7 mm width, and 1 mm height enable space-saving PCB designs.
Product Description
onsemi FDC6306P is an Isolated PowerTrench 2 Type P-Channel MOSFET providing a maximum continuous drain current of 1.9 A and maximum drain-source voltage of 20 V in a compact SOT-23 6-pin surface mount package. This device employs an enhancement channel mode with isolated transistor configuration designed for efficient power switching applications.
PowerTrench® MOSFETs from onsemi are optimised for high system efficiency and increased power density by combining low gate charge, low reverse recovery charge, and soft reverse recovery body diode for fast synchronous rectification, widely used in AC/DC power supplies, industrial, and manufacturing electronic circuits.
The FDC6306P features a shielded-gate structure offering charge balance, resulting in significantly improved Figure of Merit (FOM) compared to previous generation MOSFETs. Its soft body diode enhances efficiency by eliminating the need for snubber circuits or higher voltage MOSFET replacements.
Operating temperature range from -55°C to 150°C and maximum power dissipation of 960 mW support demanding industrial and commercial electronic designs requiring robust thermal and electrical performance.
With compact physical dimensions of 3 mm length, 1.7 mm width, and 1 mm height, this device is well suited for space-conscious electronic component integration while maintaining reliable surface mounting with 6 pins.
The MOSFET offers low typical gate charge of 3 nC to facilitate fast switching. Maximum gate-source voltage values of -8 V to +8 V ensure device protection during operation. The device includes two elements per chip offering enhanced dual transistor configuration.
Applications include power management in industrial, manufacturing, and consumer electronic devices where efficient switching MOSFETs with compact packages are essential.
onsemi provides a comprehensive range of MOSFET devices contoured for various voltage and current ratings including high-voltage and low-voltage options to meet diverse engineering requirements.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.9 A.
It has a maximum drain-source voltage of 20 V.
The typical gate charge is low at 3 nanocoulombs (nC).
This unit has compact dimensions of 3 mm in length, 1.7 mm in width, and 1 mm in height.
The operating temperature range is from -55°C to 150°C.
It supports a maximum power dissipation of 960 milliwatts (mW).
This model utilizes surface mount type for installation.
It features two elements per chip, enhancing its dual transistor configuration.
The maximum gate-source voltage values are -8 V to +8 V.
The maximum drain-source resistance is 270 milliohms (mΩ).
It has a Type P channel configuration.
This MOSFET is suitable for power management in industrial, manufacturing, and consumer electronic devices.
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