onsemi Isolated PowerTrench 2 Type P-Channel MOSFET 1.9 A 20 V Enhancement 6-Pin SOT-23 FDC6306P

onsemi FDC6306P Isolated PowerTrench 2 Type P-Channel MOSFET is a high-efficiency power transistor optimized for switching applications in electronics. It supports a maximum continuous drain current of 1.9 A and a maximum drain-source voltage of 20 V, making it suitable for low-voltage power management.

This device comes in a 6-Pin SOT-23 surface mount package with a compact footprint measuring 3 mm in length, 1.7 mm in width, and 1 mm in height. The enhancement mode channel type ensures precise transistor control for switching efficiency.

The FDC6306P features a low maximum drain-source resistance of 270 milliohms, which reduces conduction losses and improves overall efficiency. Its typical gate charge is 3 nanocoulombs at the gate-source voltage, facilitating rapid switching cycles. The transistor is rated for operation from -55°C up to 150°C, allowing use in a wide range of environments.

This MOSFET uses onsemi's advanced PowerTrench technology, offering soft body diode performance that minimizes switching losses and can eliminate the need for additional snubber circuits, enhancing system reliability and power density.

With two elements per chip and isolated transistor configuration, this dual P-Channel MOSFET is suitable for power supply, industrial control, and electronic equipment requiring efficient low-voltage switching. It is ideal for applications in industrial electronics, consumer electronics, automotive systems, and power management solutions.

Supports maximum continuous drain current of 1.9 A. Operates at a maximum drain-source voltage of 20 V. Packaged in a compact 6-Pin SOT-23 surface mount package. Features an enhancement mode channel for improved control.

Maximum drain-source resistance of 270 milliohms ensures low power loss. Typical gate charge of 3 nanocoulombs enables fast switching. Operates between -55°C and 150°C ambient temperatures. Soft body diode minimizes switching losses and eliminates snubber circuits.

Dual P-Channel transistor configuration optimizes system efficiency. Compact device dimensions: 3 mm length, 1.7 mm width, and 1 mm height. Explore more onsemi semiconductor devices and power transistors in the Electronics & Electricals category at EnvMart.