onsemi PowerTrench Type P-Channel MOSFET, 4.5 A, 20 V, Enhancement Mode, 6-Pin SOT-23 FDC638P

onsemi FDC638P PowerTrench Type P-Channel MOSFET is a highly efficient transistor optimized for power switching applications. It supports a maximum continuous drain current of 4.5 A and a drain-source voltage of 20 V in an enhancement mode channel, housed in a compact 6-pin SOT-23 surface-mount package.

This MOSFET boasts a low maximum drain-source resistance of 72 mΩ and typical gate charge of 10 nC, features that contribute to fast switching performance and increased system efficiency. The advanced PowerTrench® technology utilized in this device reduces the Figure of Merit (FOM), enhancing power density and efficiency for modern electronic designs.

The FDC638P can operate in temperatures ranging from -55°C to 150°C, making it suitable for a wide variety of industrial, electronic, and power supply applications. Its soft reverse recovery body diode reduces the need for snubber circuits, further optimizing circuit design.

Physical dimensions of 3 mm length, 1.7 mm width, and 1 mm height allow for integration into space-constrained electronic circuits. The device handles a maximum power dissipation of 1.6 W ensuring stable thermal performance under load conditions.

Typical applications include synchronous rectification in AC/DC power supplies, industrial electronic circuits, and general-purpose P-channel MOSFET switching. It is well-suited for electronics manufacturing, industrial controls, and other commercial electronic component assembly processes.

The device features an enhancement mode channel with a low 72 mΩ drain-source resistance. Compact 6-pin SOT-23 package enables surface mounting on circuit boards. Maximum power dissipation is rated at 1.6 W to maintain efficient thermal performance.

Operates reliably over a temperature range from -55°C to 150°C. The MOSFET has a typical gate charge of 10 nC, supporting fast switching applications. Gate source voltage rating ranges from -8 V to +8 V to provide stable control.

Forward voltage is approximately -1.2 V, optimized for synchronous rectification circuits. Physical dimensions are 3 mm length, 1.7 mm width, and 1 mm height, supporting compact design. PowerTrench technology optimizes system efficiency and power density in electronic components.

Ideal for powering switching in AC/DC power supplies and various industrial electronics. Browse more Power MOSFETs and semiconductor products for advanced electronics design on EnvMart.