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onsemi N-Channel Enhancement Mode MOSFET 220 mA 50 V SOT-23 3-Pin BSS138K

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onsemi N-Channel Enhancement Mode MOSFET 220 mA 50 V SOT-23 3-Pin BSS138K

Name: onsemi N-Channel Enhancement Mode MOSFET 220 mA 50 V SOT-23 3-Pin BSS138K
Brand: onsemi
SKU: 227900
Price: 0.08 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	930μm
Length	2.92mm
Model	BSS138K
Width	1.3mm
Mount Type	Surface
Series	BSS138K
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	220mA
Maximum Drain Source Voltage Vds	50V
Maximum Drain Source Resistance Rds	2.5Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	350mW
Typical Gate Charge Qg @ Vgs	2.4nC
Maximum Gate Source Voltage Vgs	-12, +12V
Forward Voltage Vf	1.2V

Key Features

Compact SOT-23 package with 3 pins suitable for surface mounting.
Low maximum drain-source resistance of 2.5 ohms ensuring efficient operation.
Maximum power dissipation rating of 350 mW for reliable performance.
Typical gate charge of 2.4 nC enabling fast switching speeds.
Wide operating temperature range from -55°C to 150°C for versatile use.
Gate-source voltage rated at ±12 V supporting robust control signals.
Forward voltage of 1.2 V ensuring minimal power loss during conduction.
Automotive standard compliant with AEC-Q101 for quality assurance.

Product Description

The onsemi BSS138K is a high-quality N-Channel Enhancement Mode MOSFET designed primarily for switching and amplification applications in electronic circuits. Packaged in a compact 3-pin SOT-23 surface mount package, this transistor supports a maximum continuous drain current of 220 mA and a drain-source voltage rating of 50 V, making it well-suited for low power and signal switching functions.

Manufactured using proprietary high cell density DMOS technology, the BSS138K achieves a low on-resistance of 2.5 ohms, which ensures energy-efficient operation and contributes to minimal heat generation. The device features a maximum power dissipation of 350 mW, allowing it to handle typical loads in control and signal processing applications reliably.

Its typical gate charge of 2.4 nC supports high-speed switching, making it ideal for pulse-width modulation (PWM) and digital switching circuits. The MOSFET operates safely over a broad temperature range from -55°C to 150°C, which supports use in harsh environmental conditions and automotive electronics.

The gate-source voltage tolerance of ±12 V permits robust handling of control voltages without risk of damage. With a forward voltage of 1.2 V, this transistor ensures efficient conduction with minimal voltage drop. Additionally, the BSS138K meets automotive standard AEC-Q101, ensuring quality and reliability for automotive and industrial applications.

Compact SOT-23 3-pin surface mount package for space-saving designs. Low on-state resistance for minimal conduction losses. High power dissipation supporting stable operation. Fast switching with low gate charge. Wide temperature range for versatility.

Robust gate voltage ratings for dependable control. Forward voltage optimized for efficiency. Automotive standard compliant enhancing reliability.

This MOSFET is widely used in industrial electronics, telecommunications equipment, automotive electronics, power management circuits, and consumer electronics where reliable low voltage switching is required. It is an excellent choice for designers seeking compact, efficient, and durable transistor solutions.

Browse more semiconductor and MOSFET components from onsemi and other reputable brands at EnvMart for your electronic component sourcing needs.