onsemi PowerTrench Type P-Channel MOSFET 4.5 A 20 V Enhancement 6-Pin SOT-23 FDC638P

onsemi FDC638P is a PowerTrench Type P-Channel MOSFET designed for discrete semiconductor applications requiring efficient power switching. This enhancement mode MOSFET supports a maximum continuous drain current of 4.5 A and a drain-source voltage up to 20 V, making it suitable for low voltage power management circuits.

The device comes in a compact 6-pin SOT-23 surface mount package enabling easy integration into modern PCB assemblies used in industrial electronics, automotive systems, consumer electronics, and power supplies. The PowerTrench technology incorporated in the FDC638P improves system efficiency and power density significantly by minimizing gate charge (10 nC) and optimizing the body diode recovery behavior for fast switching performance.

Designed to operate across a wide temperature range from -55°C to 150°C, the MOSFET ensures robustness in harsh environments. It features a typical forward voltage of -1.2 V and supports maximum gate-source voltages of -8 to +8 volts. Key physical dimensions include 3 mm length, 1.7 mm width, and 1 mm height, suitable for compact circuit design.

This P-Channel enhancement mode MOSFET is ideal for industrial electronics, power regulation, and automotive electronic controls where efficient switching and thermal performance are critical. It requires surface mounting on PCBs and integrates seamlessly with various power management designs.

Offers a maximum continuous drain current of 4.5 A for efficient power handling. Compact SOT-23 package with 6 pins enables easy surface mounting on PCBs. Maximum drain-source voltage rating is 20 V for low voltage applications.

PowerTrench technology optimizes system efficiency and power density. Features low gate charge of 10 nC facilitating fast switching performance. Supports a maximum power dissipation of 1.6 W under operating conditions. Operates reliably over a temperature range from -55°C to 150°C.

The device has a typical forward voltage of -1.2 V and maximum gate-source voltage of +/- 8 V. Physical dimensions are 3 mm length, 1.7 mm width, and 1 mm height. Explore a wide range of MOSFETs and discrete semiconductor devices at EnvMart to suit your industrial and electronics design needs.