onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 2.3 A, 60 V Enhancement Mode, 8-Pin SOIC Package NDS9948

onsemi NDS9948 Isolated PowerTrench 2 Type P-Channel MOSFET is engineered for advanced power management in electronic circuits, featuring a maximum continuous drain current of 2.3 A and a drain-source voltage rating of 60 V. Packaged in a compact 8-pin SOIC surface-mount form factor, this device supports applications requiring efficient switching and minimal losses.

Utilizing the PowerTrench technology, this MOSFET offers a low gate charge of 9 nC and a soft reverse recovery body diode, which enhances switching performance and reduces electromagnetic interference. The device's enhancement mode operation ensures precise control for power electronics designs.

With a maximum power dissipation rating of 2 W and operational temperature range from -55°C to 175°C, the NDS9948 is suitable for demanding industrial and commercial environments including power supplies, motor control, and other synchronous rectification systems.

The transistor's isolated configuration and shielded-gate structure improve charge balance, thus lowering the figure of merit (FOM) compared to earlier generations, enabling higher efficiency and reliability.

Physical dimensions of 5 mm length, 4 mm width, and 1.5 mm height allow integration into space-constrained boards. The device features 2 elements per chip, ensuring stable operation in dual-channel configurations.

This MOSFET does not carry any automotive certification but is optimized for system efficiency and enhanced power density solutions. The typical forward voltage is -0.8 V, facilitating quick and soft switching characteristics.

Features a surface-mount 8-pin SOIC package ideal for compact circuits. Designed with an enhancement mode channel for controlled conduction. Maximum continuous drain current of 2.3 amperes for moderate load requirements.

PowerTrench technology offers low gate charge and soft body diode for efficient switching. Maximum power dissipation rating of 2 watts supports reliable operation. Operates in a wide temperature range from -55°C to 175°C for industrial suitability.

Transistor has isolated configuration supporting system integration. Physical dimensions: length 5 mm, width 4 mm, height 1.5 mm ensure compact design. Channel resistance of 500 milliohms optimizes conduction efficiency.

Maximum gate-source voltage rating of -20 V to +20 V allows robust gate drive control.

This MOSFET is ideal for use in electronic manufacturing, power management, automotive electronics, and industrial automation applications requiring reliable and efficient switch-mode performance. Explore the Semiconductor category on EnvMart for similar high-quality power transistors and components.