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onsemi N-Channel Enhancement Mode MOSFET, 30 A, 50 V, 3-Pin TO-220 Package BUZ11-NR4941
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 16.51mm |
| Length | 10.67mm |
| Model | BUZ11-NR4941 |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | BUZ11 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 50V |
| Maximum Drain Source Resistance Rds | 40mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 75W |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Key Features
- This MOSFET uses enhancement mode field effect transistor technology for efficient switching performance.
- Equipped with a TO-220 package style and 3 pins for through-hole mounting.
- Maximum drain-source resistance of 40 milliohms reduces power loss.
- High power dissipation capacity of 75 Watts for demanding applications.
- Wide operating temperature range from -55°C to 150°C ensures reliability.
- Maximum gate-source voltage of ±20 Volts supports stable gate control.
- Compact physical size allows versatile use in electronic circuits.
- Designed mainly for industrial and power electronic use cases.
Product Description
onsemi BUZ11-NR4941 is a high-performance N-Channel enhancement mode MOSFET designed with a TO-220 package and three-pin configuration, suitable for through-hole mounting. It offers a continuous drain current of 30 Amperes and is rated for a maximum drain-source voltage of 50 Volts, making it ideal for power electronic circuits and switching applications.
Constructed using Fairchild Semiconductor proprietary high cell density DMOS technology, this MOSFET minimizes on-state resistance to reduce conduction losses and enhance efficiency. The maximum drain-source resistance Rds(on) is 40 milliohms, contributing to rugged and reliable device performance.
With a maximum power dissipation rating of 75 Watts and a wide operating temperature range from -55°C to 150°C, the BUZ11-NR4941 is suitable for demanding industrial and electronic environments. The maximum gate-source voltage rating of ±20 Volts ensures safe and effective gate operation. Its compact dimensions - height 16.51 mm, width 4.83 mm, and length 10.67 mm - facilitate integration into various electronic devices.
This MOSFET is widely applicable in power management, switched-mode power supplies, motor control circuits, and other semiconductor applications requiring high-current capacity and fast switching capabilities.
This MOSFET uses enhancement mode field effect transistor technology for efficient switching performance. Equipped with a TO-220 package style and 3 pins for through-hole mounting. Maximum drain-source resistance of 40 milliohms reduces power loss.
High power dissipation capacity of 75 Watts for demanding applications. Wide operating temperature range from -55°C to 150°C ensures reliability. Maximum gate-source voltage of ±20 Volts supports stable gate control. Compact physical size allows versatile use in electronic circuits.
Designed mainly for industrial and power electronic use cases. Explore more MOSFETs and semiconductor components within the Electronics & Electricals category at EnvMart for comprehensive power management and switching solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 30 Amperes.
The maximum drain-source voltage rating is 50 Volts.
It has a maximum power dissipation capacity of 75 Watts.
The maximum drain-source resistance (Rds(on)) is 40 milliohms.
The operating temperature range is from -55°C to 150°C.
This model uses a TO-220 package type.
It has a 3-pin configuration for through-hole mounting.
The maximum gate-source voltage is ±20 Volts.
It has an N-channel configuration.
This MOSFET is suitable for power management, switched-mode power supplies, and motor control circuits.
The dimensions are 16.51 mm in height, 4.83 mm in width, and 10.67 mm in length.
The country of origin for this model is India.
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