$0.54
$0.52
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 2.3 A, 60 V Enhancement, 8-Pin SOIC NDS9948
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | NDS9948 |
| Width | 4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 175°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.3A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 500mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 9nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -0.8V |
| Transistor Configuration | Isolated |
Key Features
- This MOSFET features an enhancement mode isolated transistor configuration for efficient switching.
- It has a maximum power dissipation of 2 W and a max drain-source resistance of 500 milliohms.
- Operating temperature ranges from -55°C to a maximum of 175°C for robust performance.
- The device has a typical gate charge of 9 nC at Vgs and withstands gate-source voltages from -20 V to +20 V.
- The package dimensions are compact with 1.5 mm height, 4 mm width, and 5 mm length.
- Designed for surface mount applications with 8 pins and features PowerTrench technology for enhanced efficiency.
Product Description
onsemi NDS9948 Isolated PowerTrench 2 Type P-Channel MOSFET is engineered to provide reliable and efficient power switching for electronic components requiring a maximum continuous drain current of 2.3 A and a drain-source voltage rating of 60 V. Its enhancement mode transistor configuration ensures rapid switching, suitable for a broad range of semiconductor applications.
The device incorporates advanced PowerTrench technology, which minimizes gate charge and reverse recovery, enhancing system efficiency and power density. Its soft reverse recovery body diode facilitates fast synchronous rectification without the need for snubber circuits, optimizing AC/DC power supply performance.
Featuring a compact SOIC 8-pin surface mount package, it measures 1.5 mm in height, 4 mm in width, and 5 mm in length, enabling integration into space-constrained circuits. The MOSFET operates effectively from -55°C up to 175°C, supporting diverse industrial temperature requirements.
The NDS9948 MOSFET is suitable for various industrial and electronic applications including power management, switching regulators, and automotive electronics where robust performance and efficiency are critical. Its gate-source voltage tolerance of -20 V to +20 V and minimal forward voltage of -0.8 V contribute to reliable operation in demanding environments.
This MOSFET features an enhancement mode isolated P-channel transistor configuration. Offers maximum continuous drain current of 2.3 A and maximum drain-source voltage of 60 V. Equipped with PowerTrench technology for reduced gate charge and optimized switching.
Compact 8-pin SOIC surface mount package with precise dimensions. Wide operating temperature range from -55°C to 175°C for demanding conditions. Suitable for power supply, industrial, and automotive applications. Explore a wide range of semiconductor components like the onsemi NDS9948 for efficient electronics design and manufacturing on EnvMart.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 2.3 A.
This MOSFET has a maximum drain-source voltage rating of 60 V.
The operating temperature range for this model is from -55°C to 175°C.
It comes in a compact SOIC package type with 8 pins.
The typical gate charge at Vgs is 9 nC.
The maximum power dissipation for this model is 2 W.
The maximum drain-source resistance is 500 milliohms.
The forward voltage for the NDS9948 is -0.8 V.
This model features an enhancement mode isolated P-channel transistor configuration.
It utilizes PowerTrench technology for enhanced efficiency and reduced gate charge.
The dimensions are 1.5 mm in height, 4 mm in width, and 5 mm in length.
This MOSFET is suitable for power management, switching regulators, and automotive electronics.
Related Products
Other Products from this brand
$6.78
$6.57
-3%
New
$23.16
$20.22
-12.7%
New
$0.54
$0.52
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent