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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 700V to 1200V 2.5A Enhancement Mode TO-220 STF3NK100Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | STF3NK100Z |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.5A |
| Maximum Drain Source Voltage Vds | 1kV |
| Maximum Drain Source Resistance Rds | 6Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 25W |
| Typical Gate Charge Qg @ Vgs | 18nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- This device features enhancement-mode operation for efficient switching performance.
- Maximum continuous drain current is 2.5 amperes, supporting moderate power applications.
- Drain-source voltage rating of 1000 volts ensures high voltage tolerance.
- The 3-pin TO-220 package allows through-hole mounting with superior thermal dissipation.
- Maximum power dissipation of 25 watts enables reliable operation under load.
- Operating temperatures range from -55°C to 150°C, suitable for industrial environments.
- Low typical gate charge of 18 nC improves switching efficiency and speed.
- Gate-source voltage can be driven between -30 V and +30 V for flexible control.
Product Description
STMicroelectronics STF3NK100Z is a high-quality MDmesh SuperMESH N-Channel MOSFET, designed for advanced power switching applications requiring up to 2.5 A continuous drain current and 1 kV drain-source voltage.
The device operates in enhancement mode and is housed in a robust TO-220 through-hole package, ensuring excellent thermal performance and mechanical stability during assembly.
Designed to operate within a wide temperature range from -55°C to 150°C, this MOSFET suits industrial, power management, and electronic component manufacturing environments where durability and reliability are critical.
Its low typical gate charge of 18 nC and wide gate-source voltage swing (-30 V to +30 V) facilitate efficient switching, minimizing power loss and heat generation in power conversion circuits.
Physical dimensions are compact, with 10.4 mm length, 16.4 mm height, and 4.6 mm width, making it suitable for space-constrained PCB layouts. This MOSFET is ideal for applications in industrial power electronics, renewable energy systems, motor controls, and HVAC controls.
Its MDmesh SuperMESH series technology enhances switching speed and reduces conduction losses. The 3-pin TO-220 package ensures compatibility with standard through-hole PCB designs. Maximum power dissipation rating of 25 W supports medium power applications reliably.
The device complies with no specific standards or automotive approvals but maintains ruggedness for demanding conditions.
Set yourself up for efficient and reliable electronic power switching with the STMicroelectronics STF3NK100Z MDmesh SuperMESH N-Channel MOSFET. Explore more semiconductor solutions on EnvMart for your industrial and manufacturing needs.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.5 amperes.
This MOSFET has a drain-source voltage rating of 1000 volts.
The physical dimensions of this unit are 10.4 mm in length, 16.4 mm in height, and 4.6 mm in width.
The maximum power dissipation rating is 25 watts, allowing for reliable operation under load.
It operates within a temperature range of -55°C to 150°C, making it suitable for industrial environments.
This model is housed in a TO-220 package, which allows for through-hole mounting.
The typical gate charge is 18 nC, which improves switching efficiency and speed.
The gate-source voltage can be driven between -30 V and +30 V, providing flexible control.
This device features an N-channel type configuration.
The channel mode for this model is enhancement mode, which is designed for efficient switching performance.
The maximum drain-source resistance is 6Ω.
This MOSFET is suitable for applications in industrial power electronics, renewable energy systems, motor controls, and HVAC controls.
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