STMicroelectronics MDmesh K3 Series SuperMESH3 N-Channel MOSFET, 450 V, 600 mA, 4-Pin SOT-223 STN3N45K3

STMicroelectronics STN3N45K3 is an N-Channel MOSFET from the MDmesh K3 series featuring SuperMESH3 technology. This device supports a maximum continuous drain current of 600 mA and a maximum drain-source voltage of 450 V, making it well-suited for power switching applications.

Housed in a compact 4-pin SOT-223 surface-mount package, the MOSFET allows efficient thermal dissipation with a maximum power rating of 2 W. It operates reliably across an extended temperature range from -55°C to 150°C, ensuring durability in harsh environments.

With a typical gate charge of 6 nC at Vgs and gate-source voltage tolerance from -30 V to +30 V, this transistor minimizes switching losses and allows precise gate control. Its maximum drain-source resistance of 3.8 Ω indicates high efficiency in conduction states.

The device’s small form factor (6.7 mm length, 3.7 mm width, 1.8 mm height) makes it suitable for dense PCB layouts and compact electronics designs. The enhancement mode channel type ensures standard transistor operation in a variety of industrial and commercial applications including power management, industrial control, and automation systems.

Features a 4-pin SOT-223 package optimized for surface mounting. Capable of handling 600 mA continuous drain current. Maximum drain-source voltage rating of 450 V. Robust thermal capability with 2 W power dissipation. Wide operating temperature range from -55°C to 150°C.

Low gate charge of 6 nC for efficient switching. Gate-source voltage tolerance from -30 V to +30 V. Compact dimensions ideal for high-density designs.

This STMicroelectronics MOSFET is ideal for use in industrial electronics, power converters, embedded systems, and other applications requiring reliable and efficient switching devices.

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