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Infineon HEXFET Type P-Channel MOSFET 20V 2.6A 3-Pin SOT-23 IRLML2246TRPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.02mm
Length 3.04mm
Model IRLML2246TRPBF
Width 1.4mm
Mount Type Surface
Series HEXFET
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 2.6A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 236mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.3W
Typical Gate Charge Qg @ Vgs 2.9nC
Maximum Gate Source Voltage Vgs -12, +12V
Forward Voltage Vf -1.2V

Key Features

  • Features low Rds(on) resistance of 236mΩ for efficient conduction.
  • Designed for surface mount applications with HEXFET technology.
  • Supports a maximum power dissipation of 1.3 W.
  • Operates within a temperature range from -55°C to 150°C.
  • Typical gate charge is 2.9 nC at Vgs.
  • Maximum gate source voltage rating is ±12 V.
  • Compact dimensions of 3.04 mm length, 1.4 mm width, and 1.02 mm height.
  • Enhanced type P channel MOSFET suitable for power switching applications.

Product Description

Infineon IRLML2246TRPBF is a HEXFET type P-Channel MOSFET designed for efficient power switching applications requiring up to 2.6 A continuous drain current and a maximum drain source voltage of 20 V. Packaged in a compact and surface mountable 3-pin SOT-23 form factor, this MOSFET offers low conduction losses with a maximum drain source resistance of 236 milliohms.

Designed with enhancement mode channel operation, it features a typical forward voltage of -1.2 V and can dissipate power up to 1.3 W continuously. The device operates reliably across a wide temperature range from -55°C up to a maximum of 150°C, ensuring robust performance in harsh industrial and electronic environments.

The gate input charge is low at 2.9 nC at standard gate voltage, allowing for fast switching speeds and high efficiency in power management circuits. The maximum allowable gate source voltage swing is ±12 V, accommodating a variety of control signals.

Physical dimensions are small to allow high-density PCB layouts - length 3.04 mm, width 1.4 mm, height 1.02 mm - enabling compact electronic designs. This P-channel MOSFET is ideal for applications in electronic component assemblies requiring surface mounting, including power control circuits, voltage regulation, and load switching in consumer electronics, automotive, and industrial equipment.

Low on-resistance (236mΩ) reduces conduction losses. Wide operating temperature range (-55°C to 150°C) for reliability. Compact SOT-23 package suits surface mount technology. Efficient power dissipation up to 1.3 W. Low gate charge enhances switching speed and reduces losses.

Hexfet technology for improved performance and system efficiency. P-Channel enhancement mode channel for versatile designs. Maximum gate voltage ±12 V for control flexibility.

This MOSFET is a reliable choice for engineers designing efficient power electronics circuits requiring compact, high-performance, small form factor semiconductor devices. Browse the Electronics & Electricals category for more semiconductor solutions on EnvMart.

Infineon HEXFET Type P-Channel MOSFET 20V 2.6A 3-Pin SOT-23 IRLML2246TRPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 2.6 A.

This MOSFET has a maximum drain source voltage rating of 20 V.

The typical gate charge for this model is 2.9 nC at the specified gate voltage.

It can dissipate a maximum power of 1.3 W continuously.

The dimensions of this model are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.

This MOSFET operates within a temperature range from -55°C to 150°C.

The maximum gate source voltage rating for this model is ±12 V.

This model is designed for surface mounting.

It features a type P-channel configuration.

The maximum drain source resistance is 236 mΩ.

This model is suitable for power control circuits, voltage regulation, and load switching in various electronic applications.

This model belongs to the HEXFET series.

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