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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | IRLML2246TRPBF |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.6A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 236mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.3W |
| Typical Gate Charge Qg @ Vgs | 2.9nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | -1.2V |
Infineon IRLML2246TRPBF is a HEXFET type P-Channel MOSFET designed for efficient power switching applications requiring up to 2.6 A continuous drain current and a maximum drain source voltage of 20 V. Packaged in a compact and surface mountable 3-pin SOT-23 form factor, this MOSFET offers low conduction losses with a maximum drain source resistance of 236 milliohms.
Designed with enhancement mode channel operation, it features a typical forward voltage of -1.2 V and can dissipate power up to 1.3 W continuously. The device operates reliably across a wide temperature range from -55°C up to a maximum of 150°C, ensuring robust performance in harsh industrial and electronic environments.
The gate input charge is low at 2.9 nC at standard gate voltage, allowing for fast switching speeds and high efficiency in power management circuits. The maximum allowable gate source voltage swing is ±12 V, accommodating a variety of control signals.
Physical dimensions are small to allow high-density PCB layouts - length 3.04 mm, width 1.4 mm, height 1.02 mm - enabling compact electronic designs. This P-channel MOSFET is ideal for applications in electronic component assemblies requiring surface mounting, including power control circuits, voltage regulation, and load switching in consumer electronics, automotive, and industrial equipment.
Low on-resistance (236mΩ) reduces conduction losses. Wide operating temperature range (-55°C to 150°C) for reliability. Compact SOT-23 package suits surface mount technology. Efficient power dissipation up to 1.3 W. Low gate charge enhances switching speed and reduces losses.
Hexfet technology for improved performance and system efficiency. P-Channel enhancement mode channel for versatile designs. Maximum gate voltage ±12 V for control flexibility.
This MOSFET is a reliable choice for engineers designing efficient power electronics circuits requiring compact, high-performance, small form factor semiconductor devices. Browse the Electronics & Electricals category for more semiconductor solutions on EnvMart.
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