onsemi PowerTrench N-Channel MOSFET, 122 A, 80 V Enhancement Mode, 8-Pin WDFN Package FDMS86300

onsemi FDMS86300 is a PowerTrench 8-pin WDFN package N-Channel MOSFET designed for high-performance power management in electronic circuits. It supports a continuous drain current up to 122 A and a maximum drain-source voltage of 80 V, making it suitable for demanding industrial, automotive, and power supply applications.

This MOSFET operates with an enhancement mode channel and features a low maximum drain-source resistance (Rds) of 5.8 milliohms, enabling efficient conduction and minimal power loss.

The device is capable of dissipating up to 104 W of power and maintains reliable operation across a wide temperature range from -55°C to 150°C, ensuring durability in critical environments.

The compact WDFN package measures 5 mm in length, 6 mm in width, and 1.05 mm in height, facilitating space-saving PCB designs. Its surface mount type allows for efficient assembly in mass production.

Key electrical characteristics include a maximum gate-source voltage range of -20 V to +20 V and a typical gate charge of 72 nC at Vgs, providing fast switching capabilities that are essential for power electronics and switching regulators.

Forward voltage is rated at 1.2 V, balancing conduction efficiency with device protection.

Ideal for use in industrial controls, power converters, motor drivers, and automotive electronics, this MOSFET is part of onsemi's PowerTrench series, recognized for quality and performance in semiconductor components.

Supports maximum continuous drain current of 122 amperes for high current applications. Operates with a maximum drain-source voltage of 80 volts ensuring robust voltage tolerance. Features low maximum drain-source resistance of 5.8 milliohms for efficient power handling.

Capable of dissipating up to 104 watts of power, suitable for demanding electrical environments. Compact 8-pin WDFN package design with dimensions of 5 mm length, 6 mm width, and 1.05 mm height. Wide operating temperature range from -55°C to 150°C ensures reliability in harsh conditions.

Maximum gate-source voltage rating of -20V to +20V allows versatile gate drive options. Typical gate charge of 72 nanocoulombs supports efficient switching performance. Forward voltage rating of 1.2 V supports controlled conduction characteristics.

Designed for surface mount applications with PowerTrench series technology by onsemi. Explore additional high-quality MOSFET and semiconductor solutions from onsemi to enhance your industrial and electronic projects at EnvMart.