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onsemi PowerTrench N-Channel MOSFET 100 V, 11.2 A, 5 W, 8-Pin SOIC FDS86140

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onsemi PowerTrench N-Channel MOSFET 100 V, 11.2 A, 5 W, 8-Pin SOIC FDS86140

Name: onsemi PowerTrench N-Channel MOSFET 100 V, 11.2 A, 5 W, 8-Pin SOIC FDS86140
Brand: onsemi
SKU: 227529
Price: 2.92 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.5mm
Length	4mm
Model	FDS86140
Width	5mm
Mount Type	Surface
Series	PowerTrench
Maximum Operating Temperature	150°C
Package Type	SOIC
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	11.2A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	17mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	5W
Typical Gate Charge Qg @ Vgs	29nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	800mV

Key Features

Surface mounting SOIC package with 8 pins ensures compact integration.
Enhancement mode channel type delivers efficient switching performance.
Maximum power dissipation of 5 W supports reliable operation under load.
Low maximum drain-source resistance of 17 milliohms reduces conduction losses.
Operating temperature range from -55°C to 150°C enables broad application environments.
Typical gate charge of 29 nC at Vgs supports fast switching speeds.
Gate-source voltage rating of -20 V to +20 V ensures robust gate protection.
Compact dimensions with length 4 mm, width 5 mm, and height 1.5 mm for dense PCB layouts.

Product Description

onsemi FDS86140 PowerTrench N-Channel MOSFET is a semiconductor device designed for power switching applications, offering a maximum drain-source voltage of 100 V and maximum continuous drain current of 11.2 A. Packaged in an 8-pin SOIC surface-mount format, this MOSFET provides efficient and compact solutions for electronic circuits in industrial and commercial sectors.

The device features an enhancement mode N-channel for optimal conductivity with a maximum power dissipation of 5 W, ensuring reliable performance under varying electrical loads and thermal conditions. Its low maximum drain-source resistance of 17 milliohms decreases power losses and improves energy efficiency, suitable for power supply, motor control, and DC-DC converter applications.

Its operating temperature range spans from -55°C to 150°C, making it versatile for environments requiring thermal endurance. The typical gate charge of 29 nC at Vgs offers fast switching capabilities, essential for high-frequency operation in power management systems. The gate-source voltage tolerance between -20 V and +20 V provides robust protection against voltage spikes, increasing device longevity.

The compact form factor with dimensions 4 mm in length, 5 mm in width, and 1.5 mm in height facilitates integration into densely populated printed circuit boards, prominent in consumer electronics and automotive control modules. The forward voltage drop of 800 mV complements power efficiency in switching circuits.

This PowerTrench MOSFET from onsemi is ideal for electronics engineers and designers requiring high-performance discrete semiconductor devices for industrial, automotive, HVAC, and consumer electronics applications. It supports diverse workloads with its stable thermal and electrical characteristics.

Surface mount 8-pin SOIC package enhancing ease of assembly. High maximum drain current allowing for significant power handling. Wide operating temperature range suitable for demanding conditions. Low Rds(on) minimizing power losses in conduction.

Fast switching supported by optimal gate charge parameters. Explore more semiconductor and MOSFET components from onsemi on EnvMart for your industrial and commercial electronic projects.