onsemi PowerTrench N-Channel MOSFET 8 A 100 V Enhancement 3-Pin TO-252 FDD86102LZ

onsemi FDD86102LZ is a PowerTrench® N-Channel MOSFET transistor designed for power management and switching applications. It features an 8 ampere maximum continuous drain current and a drain-source voltage rating of 100 volts, suitable for use in electronic circuits requiring robust power handling.

This enhancement mode MOSFET utilizes a low resistance of 40 milliohms to ensure efficient conduction with minimal thermal losses. Packaged in a compact TO-252 surface mount form factor with 3 pins, it enables space-saving designs on PCBs.

The device has a maximum power dissipation rating of 54 watts, allowing operation in high-demand environments. It is specified for a temperature range from -55°C to 150°C, ensuring reliability across industrial and commercial temperature extremes.

Additional parameters include a typical gate charge of 18 nanocoulombs facilitating rapid switching and a gate-source voltage tolerance of -20 to +20 volts enhancing device robustness. The forward voltage drop of 820 millivolts further optimizes energy efficiency in circuits.

onsemi's PowerTrench series is well-regarded in semiconductor components for power and connectors, making the FDD86102LZ suitable in industrial electronics, power management modules, automotive electronics, and general semiconductor applications.

Supports maximum continuous drain current of 8 amperes for robust performance. Maximum drain-source voltage is rated at 100 volts ensuring reliable operation. Features enhancement mode channel for efficient switching applications.

Low maximum drain-source resistance of 40 milliohms minimizes power loss. Maximum power dissipation of 54 watts supports durable use in demanding circuits. Operates effectively within a temperature range from -55°C to 150°C.

Compact TO-252 surface mount package with 3 pins for easy PCB integration. Typical gate charge of 18 nanocoulombs allows for quick switching speeds. Maximum gate-source voltage tolerance of -20 to +20 volts ensures stability under varying conditions.

Forward voltage drop of 820 millivolts optimizes efficiency in power circuits.

This MOSFET is suited for multiple industrial, automotive, and electronic manufacturing use cases including power regulation, switching, and amplifying circuits. Explore our extensive catalog of semiconductors at EnvMart for additional components.