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onsemi PowerTrench N-Channel MOSFET 6.6 A 100 V Enhancement 4-Pin SOT-223 FDT86102LZ

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onsemi PowerTrench N-Channel MOSFET 6.6 A 100 V Enhancement 4-Pin SOT-223 FDT86102LZ

Name: onsemi PowerTrench N-Channel MOSFET 6.6 A 100 V Enhancement 4-Pin SOT-223 FDT86102LZ
Brand: onsemi
SKU: 227518
Price: 0.74 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.7mm
Length	3.7mm
Model	FDT86102LZ
Width	6.7mm
Mount Type	Surface
Series	PowerTrench
Maximum Operating Temperature	150°C
Package Type	SOT-223
Minimum Operating Temperature	-55°C
Pin Count	4
Channel Type	N
Maximum Continuous Drain Current Id	6.6A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	46mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2.2W
Typical Gate Charge Qg @ Vgs	17nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.3V

Key Features

This enhancement mode MOSFET is designed for surface mount applications.
It has a low maximum drain-source resistance of 46 milliohms.
Maximum power dissipation is rated at 2.2 Watts.
Operating temperature ranges from -55°C to 150°C for reliable performance.
The device offers a typical gate charge of 17 nano-Coulombs at Vgs.
Maximum gate-source voltage tolerance is ±20 V ensuring robust gate protection.
Compact dimensions with length 3.7 mm, width 6.7 mm, and height 1.7 mm facilitate PCB design.
Forward voltage is 1.3 V contributing to efficient switching.

Product Description

onsemi FDT86102LZ PowerTrench N-Channel MOSFET is a robust semiconductor device optimized for industrial, electronic components, power electronics, and manufacturing applications. With a maximum continuous drain current of 6.6 A and a drain-source voltage rating of 100 V, this MOSFET suits switching and amplification needs in power management circuits.

Featuring an enhancement channel mode and a low maximum drain-source resistance of 46 milliohms, the device delivers high efficiency and low power loss. The surface-mount SOT-223 package with 4 pins simplifies assembly on printed circuit boards while enabling thermal management with a power dissipation capacity of 2.2 W.

This MOSFET operates reliably within a wide temperature range of -55°C to 150°C, making it suitable for demanding industrial environments. The typical gate charge of 17 nC and a maximum gate-source voltage of ±20 V protect gate integrity while allowing responsive switching.

The compact physical dimensions of 3.7 mm length, 6.7 mm width, and 1.7 mm height enable flexible layout designs in electronic devices. The device has a forward voltage drop of 1.3 V, supporting efficient power conversion and regulation.

Use cases include power supply circuits, motor controls, electronic switching, and general industrial electronics circuits requiring reliable N-channel MOSFETs with moderate current and voltage ratings.

This MOSFET is part of the PowerTrench series, known for low resistance and robust electrical characteristics. Designed primarily for surface mount mounting, it supports automated assembly and compact electronics design.

The device does not have specific automotive certifications and complies with basic standards. Package type SOT-223 enables easy integration into various electronic assemblies. Ideal for engineers designing power management and control solutions in diverse industrial sectors.

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