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onsemi UniFET N-Channel MOSFET 15 A 650 V Enhancement 3-Pin TO-220 FDPF15N65
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 15.87mm |
| Length | 10.16mm |
| Model | FDPF15N65 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | UniFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 15A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 440mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 38.5W |
| Typical Gate Charge Qg @ Vgs | 48.5nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.4V |
Key Features
- This MOSFET features a maximum continuous drain current of 15 A for robust current handling.
- It supports a maximum drain-source voltage of 650 V suitable for high voltage systems.
- The device uses a TO-220 package and through-hole mounting for easy integration.
- Enhancement channel mode provides superior switching performance.
- Maximum power dissipation is rated at 38.5 W for reliable operation.
- Operation temperature ranges from -55°C to 150°C ensuring durability in harsh environments.
- Featuring a low maximum drain-source resistance of 440 mΩ for minimum power loss.
- Contains 3 pins and an internal gate-source ESD diode for surge protection.
Product Description
onsemi FDPF15N65 is a UniFET™ N-Channel MOSFET designed for high voltage and power applications with a maximum continuous drain current of 15 A and drain-source voltage rating of 650 V. Encapsulated in a TO-220 package with through-hole mounting type and 3 pins, this device offers robust performance and ease of installation for various electronic and industrial equipment.
The enhancement mode channel ensures superior switching characteristics and the MOSFET has a low on-state resistance of 440 mΩ resulting in reduced conduction losses and improved energy efficiency. The maximum power dissipation capability is rated at 38.5 W, making the device suitable for demanding power conversion and management applications.
Its operating temperature range from -55°C to 150°C enables resilience in challenging industrial, power supply, and automotive environments. The integrated gate-source ESD diode enhances device reliability by protecting against electrostatic discharge events up to 2000 V HBM surge stress.
The typical gate charge of 48.5 nC at Vgs and a forward voltage of 1.4 V allow for efficient switching in power factor correction circuits, flat panel displays, ATX power supplies, and electronic lamp ballasts.
With a compact dimension of 15.87 mm height, 10.16 mm length, and 4.7 mm width, the FDPF15N65 is designed for ease of use and integration into discrete semiconductor modules and circuits.
This N-Channel Enhancement MOSFET supports maximum continuous drain current of 15 A. It withstands maximum drain-source voltage up to 650 V. The low on-state resistance enhances power efficiency and reduces heat. Includes a robust gate-source ESD diode providing surge voltage protection.
Suitable for industrial power electronics including converters and power factor correction. Operates reliably over wide temperature ranges from -55°C to 150°C. Standard TO-220 package ensures compatibility with common mounting techniques.
Compact and robust design facilitates integration in electronic assemblies.
This product is manufactured in China and supplied new. It is ideal for industrial and commercial applications requiring reliable power MOSFET performance. Browse the Electronics & Electricals > Discrete Semiconductors > MOSFET category on EnvMart for related high-performance semiconductor components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 15 A.
It supports a maximum drain-source voltage of 650 V, making it suitable for high voltage systems.
The maximum drain-source resistance is rated at 440 mΩ, which helps to minimize power loss.
The maximum power dissipation capability is rated at 38.5 W, allowing for reliable operation in demanding applications.
It operates reliably over a wide temperature range from -55°C to 150°C.
This device is encapsulated in a TO-220 package, which is suitable for through-hole mounting.
The FDPF15N65 features 3 pins, facilitating easy integration into circuits.
The typical gate charge at Vgs is 48.5 nC, which allows for efficient switching.
The forward voltage is rated at 1.4 V, contributing to its overall performance in applications.
Yes, it includes an internal gate-source ESD diode that provides protection against electrostatic discharge events up to 2000 V HBM surge stress.
This MOSFET is suitable for industrial power electronics, including converters and power factor correction applications.
The product is manufactured in China.
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