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onsemi UltraFET N-Channel MOSFET, 24 A, 150 V Enhancement Mode, 8-Pin PQFN-8 Package FDMS2572
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 750μm |
| Length | 5mm |
| Model | FDMS2572 |
| Width | 6mm |
| Mount Type | Surface |
| Series | UltraFET |
| Maximum Operating Temperature | 150°C |
| Package Type | PQFN-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 24A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 103mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 78W |
| Typical Gate Charge Qg @ Vgs | 31nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
Key Features
- Features an enhancement mode N-channel type for efficient switching.
- Maximum continuous drain current up to 24 amperes.
- Supports a maximum drain-source voltage of 150 volts.
- Low drain-source resistance of 103 milliohms for minimal conduction losses.
- Compact surface-mount PQFN-8 package ensures excellent thermal performance.
- Typical gate charge of 31 nanocoulombs at specified gate voltage.
- Maximum power dissipation rating of 78 watts for robust operation.
- Wide operating temperature range from -55°C to 150°C suitable for demanding environments.
Product Description
onsemi FDMS2572 UltraFET N-Channel MOSFET is a high-performance discrete semiconductor designed for demanding electronic and power management applications. It supports a continuous drain current of 24 amperes and a maximum drain-source voltage of 150 volts, providing excellent power control capabilities in a compact surface-mount PQFN-8 package.
This enhancement mode N-channel MOSFET provides benchmark efficiency for power conversion tasks, characterized by low drain-source resistance (103 milliohms), low gate charge, and high power dissipation capacity of 78 watts. These features contribute to reduced conduction losses and improved switching speed.
The device operates over a wide temperature range (-55°C to 150°C), making it suitable for various industrial, automotive (non-certified), and commercial electronics applications. Its compact dimensions (5 mm length, 6 mm width, and 750 microns height) enable integration into dense circuit designs.
Typical use cases include high-frequency DC to DC converters, switching regulators, motor drivers, and low-voltage bus switches, where efficiency and reliability are critical. The device's ultra-low reverse recovery diode and low stored charge further optimize switching efficiency.
Enhancement mode N-channel for effective power switching. Surface mount PQFN-8 package for thermal and space efficiency. Low Rds(on) and minimal gate charge for reduced electrical losses. Wide operating temperature suitable for industrial environments.
High power dissipation allowing robust performance under load. Dimensions: 5 mm length x 6 mm width x 750 µm height. Maximum gate-source voltage: -20 V to +20 V. Forward voltage approximately 1 V ensuring efficient conduction.
Not certified for automotive standards but suitable for various power management circuits. Ideal for use in motor drivers, power supplies, and DC/DC converters.
This product is a new semiconductor device originating from India-listed inventory sources. For more detailed technical information and applications, browse through the onsemi MOSFET category in EnvMart’s electronics section.
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Frequently Asked Questions
The maximum continuous drain current for this model is 24 amperes.
It supports a maximum drain-source voltage of 150 volts.
The drain-source resistance is 103 milliohms, which helps minimize conduction losses.
The typical gate charge at the specified gate voltage is 31 nanocoulombs.
The dimensions of the PQFN-8 package are 5 mm in length, 6 mm in width, and 750 microns in height.
This model operates over a wide temperature range from -55°C to 150°C.
The maximum power dissipation rating is 78 watts, allowing for robust operation under load.
It is suitable for applications such as high-frequency DC to DC converters, switching regulators, and motor drivers.
The maximum gate-source voltage is -20 V to +20 V.
This model features an enhancement mode N-channel type for efficient switching.
The forward voltage is approximately 1 volt, ensuring efficient conduction.
The PQFN-8 package has a pin count of 8.
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