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onsemi UniFET N-Channel MOSFET, 100 A, 500 V Enhancement Mode, 3-Pin TO-264 Package FDL100N50F
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 20mm |
| Length | 20mm |
| Model | FDL100N50F |
| Width | 5mm |
| Mount Type | Through Hole |
| Series | UniFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-264 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 55mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5kW |
| Typical Gate Charge Qg @ Vgs | 238nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.5V |
Key Features
- High voltage enhancement mode MOSFET suitable for switching power converter applications.
- Offers low on-state resistance for efficient power handling.
- Capable of maximum power dissipation of 2.5 kW for demanding thermal environments.
- Built for through-hole mounting and robust mechanical stability with TO-264 package.
- Operates reliably in temperature ranges from -55°C up to 150°C for industrial use.
- Internal gate-source ESD diode provides rugged protection against surges up to 2000V.
- Typical gate charge of 238nC enables superior switching performance.
- Compact dimensions with 20mm length, 20mm height, and 5mm width.
Product Description
onsemi FDL100N50F is a UniFET™ N-Channel MOSFET designed for high voltage and current applications with an enhancement mode channel and 3-pin TO-264 package configuration. It features a maximum continuous drain current of 100 A and can withstand drain-source voltages up to 500 V, making it suitable for robust power electronics tasks.
This MOSFET is engineered for use in industrial and commercial sectors, including power factor correction systems, flat panel display power supplies, ATX power supplies, and electronic lamp ballasts. The device excels in switching power converter applications due to its low on-state resistance of 55 mΩ and high avalanche energy strength.
The TO-264 package type is optimized for through-hole mounting, providing mechanical strength and effective heat dissipation. The typical gate charge of 238nC allows fast switching with minimal losses. Its maximum power dissipation capacity of 2.5 kW supports demanding electrical loads.
Operating temperature ranges from -55°C to 150°C enable reliability in harsh industrial environments. The integrated gate-source ESD diode protects the MOSFET against surge voltages exceeding 2000V HBM, enhancing device durability.
High voltage UniFET™ N-Channel MOSFET with low on-state resistance. Maximum continuous drain current of 100 A and drain-source voltage of 500 V. 3-pin TO-264 package ensures ruggedness and efficient thermal management. Enhancement mode channel type for switching power applications.
Robust operation between -55°C and 150°C for industrial environments. Internal ESD protection withstands high surge stress. Suitable for power factor correction, ATX power supplies, and electronic lamp ballasts. Compact 20mm by 20mm by 5mm physical dimensions.
Rated for maximum power dissipation of 2.5 kW.
This onsemi MOSFET series offers engineers a reliable solution for industrial, laboratory, and manufacturing applications demanding high power, voltage, and switching efficiency. Explore further on EnvMart for related semiconductor components and MOSFET devices of this category and brand.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A.
It can withstand a maximum drain-source voltage of 500 V.
The on-state resistance is rated at 55 mΩ.
The typical gate charge is 238 nC.
It has dimensions of 20 mm in length, 20 mm in height, and 5 mm in width.
The maximum power dissipation capacity is 2.5 kW.
It operates reliably in temperature ranges from -55°C to 150°C.
This MOSFET uses a 3-pin TO-264 package type.
It is suitable for applications such as power factor correction systems, flat panel display power supplies, ATX power supplies, and electronic lamp ballasts.
It is designed for through-hole mounting, providing mechanical strength and effective heat dissipation.
This model features an enhancement mode N-channel.
It includes an internal gate-source ESD diode that provides protection against surge voltages exceeding 2000V HBM.
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