onsemi PowerTrench Type P-Channel MOSFET, 4.9 A, 30 V Enhancement, 6-Pin SOT-23 FDC610PZ

onsemi FDC610PZ PowerTrench Type P-Channel MOSFET is designed for high efficiency power switching in electronic circuits requiring a reliable surface mount device. With a maximum continuous drain current of 4.9 A and a drain-source voltage limit of 30 V, this MOSFET offers strong performance for power management applications. The device features an enhancement mode channel and is contained within a compact 6-pin SOT-23 package, measuring 3 mm in length, 1.7 mm in width, and 1 mm in height.

This MOSFET supports operating temperatures spanning from -55°C up to 150°C, ensuring suitability across a broad range of industrial and commercial environments. It delivers a maximum power dissipation of 1.6 watts, with a low maximum drain-source resistance of 75 milliohms, helping to minimize conduction losses and improve energy efficiency in circuits.

The onsemi PowerTrench MOSFET technology incorporates a shielded-gate structure with charge balance to optimize switching speed and reduce power losses. Its soft reverse recovery body diode enables improved switching characteristics, eliminating the need for snubber circuits or higher voltage MOSFET alternatives in synchronous rectification designs.

Key electrical characteristics include a typical gate charge of 17 nC at a gate-source voltage threshold, and a maximum gate-source voltage range of -25 V to +25 V, allowing flexible and robust voltage operation. The forward voltage is rated at -1.2 V, suitable for precise power control.

This device is ideal for applications in industrial electronics, power management modules, telecommunications, and other circuits requiring efficient discrete semiconductor components. The compact SOT-23 surface mount package facilitates easy integration into densely populated circuit boards.

Set includes a single onsemi FDC610PZ P-Channel MOSFET device. Product is new and originates from India by default standards. Explore more semiconductor solutions and PowerTrench MOSFETs in the Electronics & Electricals category at EnvMart for industrial and laboratory use.

Designed for efficient power switching with low gate charge and fast switching performance. Enhancement mode P-Channel MOSFET suitable for surface mount applications. Maximum power dissipation of 1.6 W and operates up to 150°C.

Compact dimensions: length 3 mm, width 1.7 mm, height 1 mm. Maximum drain-source resistance of 75 milliohms ensuring low conduction losses. Wide operating temperature range from -55°C to 150°C for robust performance. Typical gate charge of 17 nC at gate-source voltage 17 V supports efficient gate drive.

Maximum gate-source voltage rated at -25 V to +25 V allows flexible voltage tolerance. Soft reverse recovery body diode reduces switching losses in synchronous rectification.