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onsemi PowerTrench Type P-Channel MOSFET, 55 A, 35 V Enhancement Mode, 3-Pin TO-252 FDD6637
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | FDD6637 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 55A |
| Maximum Drain Source Voltage Vds | 35V |
| Maximum Drain Source Resistance Rds | 19mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 57W |
| Typical Gate Charge Qg @ Vgs | 45nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -0.8V |
Key Features
- The MOSFET is designed with enhancement mode operation for reliable switching performance.
- Features low maximum drain-source resistance of 19 milliohms for efficient conduction.
- Supports maximum gate-source voltage of ±25 volts allowing robust control.
- Capable of dissipating up to 57 watts of power with a wide operating temperature range from -55°C to 150°C.
- Ideal for power management, switching, and amplification applications in industrial and automotive electronics.
- Reliable surface mount TO-252 package ensures compatibility with automated assembly processes.
Product Description
The onsemi FDD6637 is a PowerTrench Type P-Channel MOSFET designed for high-performance electronic applications requiring efficient power switching and control.
With a maximum continuous drain current of 55 A and a maximum drain-source voltage of 35 V, this device operates in enhancement mode and features a low on-resistance of 19 milliohms, optimizing conduction efficiency and reducing heat generation.
It supports a maximum gate-source voltage ranging from -25 V to +25 V, providing robust gate control margins suitable for diverse electronic circuits.
The MOSFET package is a surface mount 3-pin TO-252 type, with compact physical dimensions of 6.73 mm length, 6.22 mm width, and 2.39 mm height, making it suitable for space-constrained designs in power management modules.
The device can dissipate power up to 57 W, enabling usage in demanding industrial, automotive, and electronic control systems that require high reliability over a wide temperature span from -55°C to 150°C.
The MOSFET features enhancement mode operation with P-Channel conduction. Its low drain-source resistance minimizes conduction losses. Wide gate-source voltage range increases switching flexibility. Package type TO-252 facilitates surface mount assembly.
High power dissipation and operating temperature range enhance durability. Compact size allows integration in dense circuit boards. Applications include industrial controls, automotive electronics, and general power management.
This product is new and made with high-quality semiconductor technology by onsemi, ensuring consistent performance and longevity. Explore our range of semiconductor devices and MOSFETs at EnvMart for reliable electronic components tailored to your technical needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 55 A.
It has a maximum drain-source voltage of 35 V.
The maximum drain-source resistance is 19 milliohms, which optimizes conduction efficiency.
This unit can dissipate up to 57 watts of power.
It operates within a temperature range of -55°C to 150°C.
The MOSFET is packaged in a surface mount 3-pin TO-252 type.
It supports a maximum gate-source voltage of ±25 V.
The dimensions are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.
The typical gate charge is 45 nC at Vgs.
It utilizes a P-Channel type channel.
This model is suitable for power management, switching, and amplification applications in industrial and automotive electronics.
The FDD6637 operates in enhancement mode, which allows for reliable switching performance.
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