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onsemi PowerTrench Type P-Channel MOSFET, Enhancement Mode, 6 A, 12 V, 6-Pin SOT-23 FDC606P
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 3mm |
| Model | FDC606P |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 53mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 18nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -0.6V |
Key Features
- This MOSFET features a low on-resistance drain-source resistance of 53 milliohms for efficient power switching.
- Typical gate charge is only 18 nanocoulombs at gate-source voltage.
- Maximum power dissipation is rated at 1.6 Watts supporting moderate thermal loads.
- Operating temperature ranges from -55°C to a maximum of 150°C ensuring reliability in harsh environments.
- The device has a shielded-gate structure enabling superior switching performance and reduced losses.
- Soft reverse recovery body diode improves synchronous rectification efficiency and eliminates snubber circuits.
- Maximum gate-source voltage tolerance is ±8 V with forward voltage approximately -0.6 V.
- Designed for power management, industrial, and consumer electronics requiring efficient P-channel switching.
Product Description
onsemi FDC606P PowerTrench Type P-Channel MOSFET is an enhancement mode transistor engineered to provide efficient power switching with a continuous drain current rating of 6 A and a maximum drain-source voltage of 12 V. Packaged in a compact 6-pin SOT-23 form factor, it is suitable for surface mount applications requiring space-saving design.
The device employs advanced shielded-gate technology to offer low gate charge (18 nC) and a low on-resistance (53 mΩ), which enhances system efficiency and reduces power losses, especially in synchronous rectification circuits. The soft reverse recovery body diode characteristic enables elimination of snubber circuits or the use of lower voltage rating MOSFETs.
Rated for continuous power dissipation of 1.6 W and operating temperatures from -55°C up to 150°C, the FDC606P is suitable for demanding industrial environments and power management applications. Its dimensions (3 mm length, 1.7 mm width, 1 mm height) enable compact circuit layouts.
This MOSFET exhibits excellent switching speed and power density due to low charge imbalance and shielded-gate construction. Its gate-source voltage rating of ±8 V protects against voltage spikes in switching applications.
The package 6-pin SOT-23 format supports automated surface mounting for high-volume production. The transistor's low forward voltage of approximately -0.6 V contributes to improved diode performance under load. The device is RoHS compliant and intended for use in industrial, consumer electronics, and power supply circuits.
The FDC606P is a reliable, high-performance P-Channel MOSFET ideal for switching, load management, and power regulation tasks in a variety of electronic equipment. Explore more electronics and semiconductor components from onsemi and related industrial-grade power MOSFETs in the EnvMart catalog.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6 A.
This MOSFET has a maximum drain-source voltage rating of 12 V.
The typical gate charge for the FDC606P is 18 nanocoulombs.
The on-resistance of this model is rated at 53 milliohms.
This MOSFET has dimensions of 3 mm in length, 1.7 mm in width, and 1 mm in height.
The operating temperature range for the FDC606P is from -55°C to 150°C.
This model supports surface mounting, suitable for compact circuit layouts.
The maximum power dissipation for this MOSFET is rated at 1.6 Watts.
The forward voltage for the FDC606P is approximately -0.6 V.
The maximum gate-source voltage tolerance for this model is ±8 V.
This MOSFET is designed for power management, industrial, and consumer electronics applications requiring efficient P-channel switching.
The FDC606P employs advanced shielded-gate technology for superior switching performance and reduced losses.
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