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onsemi UniFET N-Channel MOSFET 52 A 200 V Enhancement Mode 3-Pin TO-263 FDB52N20TM
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.572mm |
| Length | 9.98mm |
| Model | FDB52N20TM |
| Width | 10.16mm |
| Mount Type | Surface |
| Series | UniFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 52A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 49mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 357W |
| Typical Gate Charge Qg @ Vgs | 49nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.4V |
Key Features
- Enhancement mode N-Channel MOSFET designed for surface mounting applications.
- Maximum continuous drain current of 52 A ensuring high current handling capability.
- Maximum drain-source voltage rating of 200 V for reliable high-voltage performance.
- Low drain-source resistance (49 mΩ) minimizing conduction losses and enhancing efficiency.
- Maximum power dissipation of 357 W supports high power operation.
- Wide operating temperature range from -55°C to 150°C for diverse industrial environments.
- Typical gate charge of 49 nC allows fast switching speeds.
- Forward voltage drop of 1.4 V optimizes power efficiency.
Product Description
The onsemi FDB52N20TM is an Enhancement Mode N-Channel MOSFET built with UniFET technology, featuring a maximum continuous drain current of 52 A and a drain-source voltage rating of 200 V. Packaged in a 3-pin TO-263 surface-mount package, it offers low on-resistance of 49 milliohms, enabling efficient power switching with minimal loss. Its forward voltage of 1.4 V and typical gate charge of 49 nC make it suitable for fast switching applications.
This MOSFET is designed for use in various industrial electrical circuits, power management, and switching applications requiring high current capability and voltage rating within a wide temperature range from -55°C to 150°C. The device's maximum power dissipation rating of 357 W ensures robust performance in demanding environments.
Made with high cell density DMOS technology, the FDB52N20TM ensures rugged and reliable operation. While it is not automotive grade, it is ideal for power conversion, motor control, and other semiconductor applications in industrial, manufacturing, and electronics design sectors.
Enhancement mode N-Channel MOSFET with 52 A continuous current rating. 200 V maximum drain-source voltage and low Rds(on) of 49 mΩ. Compact 3-pin TO-263 package suitable for surface mounting. High power dissipation capacity of 357 W for industrial use.
Operational from -55°C to 150°C for versatile environment tolerance. Efficient switching due to 49 nC typical gate charge. Forward voltage of 1.4 V minimizes conduction losses. Reliable semiconductor device for power and control circuits.
Not compliant with automotive standards but suitable for robust electronics.
This product is ideal for engineers and professionals looking for a high current, high voltage MOSFET suitable for power electronics applications in industrial, manufacturing, and electronic infrastructure projects. Explore more onsemi semiconductor products in the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 52 A.
It has a maximum drain-source voltage rating of 200 V.
The low drain-source resistance is 49 mΩ, which helps minimize conduction losses.
This MOSFET supports a maximum power dissipation of 357 W.
The typical gate charge is 49 nC, allowing for fast switching speeds.
It operates within a temperature range from -55°C to 150°C.
This model is packaged in a 3-pin TO-263 surface-mount package.
The forward voltage drop is 1.4 V, optimizing power efficiency.
This MOSFET has a pin count of 3.
It features an N-channel type, specifically designed for enhancement mode operation.
The maximum gate-source voltage rating is -30 V to +30 V.
No, this MOSFET is not compliant with automotive standards but is suitable for industrial applications.
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