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Infineon CoolMOS C3 N-Channel MOSFET 32 A 560 V Enhancement 3-Pin TO-247 SPW32N50C3FKSA1

Category Power MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 21.1mm
Length 16.13mm
Model SPW32N50C3FKSA1
Width 5.21mm
Mount Type Through Hole
Series CoolMOS C3
Maximum Operating Temperature 150°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 32A
Maximum Drain Source Voltage Vds 560V
Maximum Drain Source Resistance Rds 110mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 284W
Typical Gate Charge Qg @ Vgs 170nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • This MOSFET features enhancement mode operation for efficient switching.
  • Maximum power dissipation is rated at 284 watts.
  • Has a low maximum drain-source resistance of 110 milliohms for minimal conduction loss.
  • Supports a maximum gate-source voltage range of -20 to +20 volts.
  • Typical gate charge at gate-source voltage is 170 nanoCoulombs to optimize switching performance.
  • Operating temperature range extends from -55°C to 150°C for durability.
  • Compact dimensions of 21.1 mm height, 16.13 mm length, and 5.21 mm width enable space-efficient PCB layouts.
  • Designed for through-hole mounting providing sturdy mechanical connection.

Product Description

Infineon SPW32N50C3FKSA1 CoolMOS C3 N-Channel MOSFET provides high-performance power semiconductor functionality with a maximum continuous drain current of 32 amperes and maximum drain-source voltage of 560 volts. Packaged in a robust 3-pin TO-247 through-hole format, this device features enhancement mode channel operation ensuring efficient power switching suitable for industrial and commercial electronic equipment.

The MOSFET supports a maximum power dissipation of 284 watts, making it well-suited for demanding power conversion and motor control applications. With a maximum drain-source resistance (Rds) of 110 milliohms, the device minimizes losses and improves thermal performance under load.

Gate driving requirements are optimized with a typical gate charge of 170 nanoCoulombs and a gate-source voltage tolerance from -20 to +20 volts, enabling fast switching and compatibility with a wide range of gate driver circuits. The device operates reliably in a broad temperature range from -55 degrees Celsius to +150 degrees Celsius.

Compact physical dimensions of 21.1 mm height, 16.13 mm length, and 5.21 mm width facilitate integration into space-constrained circuit designs. Its sturdy TO-247 package supports through-hole mounting for durable mechanical connection especially in industrial environments.

This MOSFET features enhancement mode operation for efficient switching. Maximum power dissipation of 284 watts ensures reliable thermal handling. Low Rds(on) of 110 mΩ reduces conduction losses improving efficiency. Wide gate voltage tolerance (-20 to +20 V) supports flexible gate drive designs.

Typical gate charge of 170 nC promotes rapid switching speeds. Extensive operating temperature range from -55°C to 150°C for harsh conditions. TO-247 3-pin package suits through-hole mounting applications. Compact size eases integration into high-density circuits.

Ideal for industrial, automotive, and power electronics applications. Infineon CoolMOS technology maximizes power density and system performance.

This Infineon CoolMOS C3 N-Channel MOSFET is perfect for industrial power supply design, motor control, and power conversion circuits. Its robust specs ensure long-term reliability in commercial and industrial electrical systems. Explore more Infineon semiconductors and MOSFET solutions to enhance your engineering projects at EnvMart.

Explore more products in our Power MOSFET category.

Infineon CoolMOS C3 N-Channel MOSFET 32 A 560 V Enhancement 3-Pin TO-247 SPW32N50C3FKSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 32 amperes.

This MOSFET has a maximum drain-source voltage rating of 560 volts.

It supports a maximum power dissipation of 284 watts.

The maximum drain-source resistance (Rds) is rated at 110 milliohms.

The typical gate charge at gate-source voltage is 170 nanoCoulombs.

The operating temperature range extends from -55°C to 150°C.

It is designed for through-hole mounting, providing a sturdy mechanical connection.

The dimensions are 21.1 mm in height, 16.13 mm in length, and 5.21 mm in width.

The MOSFET supports a maximum gate-source voltage range of -20 to +20 volts.

It is suitable for industrial power supply design, motor control, and power conversion circuits.

This model is packaged in a TO-247 format.

It features an enhancement mode N-channel configuration.

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