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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 21.1mm |
| Length | 16.13mm |
| Model | SPW32N50C3FKSA1 |
| Width | 5.21mm |
| Mount Type | Through Hole |
| Series | CoolMOS C3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 32A |
| Maximum Drain Source Voltage Vds | 560V |
| Maximum Drain Source Resistance Rds | 110mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 284W |
| Typical Gate Charge Qg @ Vgs | 170nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Infineon SPW32N50C3FKSA1 CoolMOS C3 N-Channel MOSFET provides high-performance power semiconductor functionality with a maximum continuous drain current of 32 amperes and maximum drain-source voltage of 560 volts. Packaged in a robust 3-pin TO-247 through-hole format, this device features enhancement mode channel operation ensuring efficient power switching suitable for industrial and commercial electronic equipment.
The MOSFET supports a maximum power dissipation of 284 watts, making it well-suited for demanding power conversion and motor control applications. With a maximum drain-source resistance (Rds) of 110 milliohms, the device minimizes losses and improves thermal performance under load.
Gate driving requirements are optimized with a typical gate charge of 170 nanoCoulombs and a gate-source voltage tolerance from -20 to +20 volts, enabling fast switching and compatibility with a wide range of gate driver circuits. The device operates reliably in a broad temperature range from -55 degrees Celsius to +150 degrees Celsius.
Compact physical dimensions of 21.1 mm height, 16.13 mm length, and 5.21 mm width facilitate integration into space-constrained circuit designs. Its sturdy TO-247 package supports through-hole mounting for durable mechanical connection especially in industrial environments.
This MOSFET features enhancement mode operation for efficient switching. Maximum power dissipation of 284 watts ensures reliable thermal handling. Low Rds(on) of 110 mΩ reduces conduction losses improving efficiency. Wide gate voltage tolerance (-20 to +20 V) supports flexible gate drive designs.
Typical gate charge of 170 nC promotes rapid switching speeds. Extensive operating temperature range from -55°C to 150°C for harsh conditions. TO-247 3-pin package suits through-hole mounting applications. Compact size eases integration into high-density circuits.
Ideal for industrial, automotive, and power electronics applications. Infineon CoolMOS technology maximizes power density and system performance.
This Infineon CoolMOS C3 N-Channel MOSFET is perfect for industrial power supply design, motor control, and power conversion circuits. Its robust specs ensure long-term reliability in commercial and industrial electrical systems. Explore more Infineon semiconductors and MOSFET solutions to enhance your engineering projects at EnvMart.
Explore more products in our Power MOSFET category.
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