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Infineon OptiMOS P Type P-Channel Power Transistor 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90P03P4L04ATMA1

Category Power MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 2.3mm
Length 6.5mm
Model IPD90P03P4L04ATMA1
Width 6.22mm
Mount Type Surface
Series OptiMOS P
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Automotive Standard AEC-Q
Channel Type Type P
Maximum Continuous Drain Current Id 90A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 4.1mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 137W
Typical Gate Charge Qg @ Vgs 125nC
Maximum Gate Source Voltage Vgs -16, +5V
Forward Voltage Vf 1.3V
OptiMOS™ P-Channel Series Temperature range from -55°C to +175°C

Key Features

  • Enhancement mode MOSFET with low on-state resistance for efficient power dissipation.
  • Surface mount package type TO-252 with 3 pins for easy PCB integration.
  • High maximum power dissipation of 137 W to handle demanding electrical loads.
  • Wide operating temperature range from -55°C to 175°C suitable for automotive and industrial use.
  • Typical gate charge of 125 nC ensuring fast switching capabilities.
  • Includes AEC-Q qualification for reliable automotive applications.
  • Compliance with RoHS directives and lead-free plating for environmental safety.

Product Description

Infineon IPD90P03P4L04ATMA1 is a high-performance OptiMOS P-Type P-Channel Power MOSFET optimized for power management applications requiring efficient switching and robust reliability. Featuring a maximum continuous drain current of 90 A and a maximum drain-source voltage of 30 V, this enhancement-mode transistor is ideal for various industrial and automotive settings.

The device employs a TO-252 surface mount package, offering a compact form factor with dimensions 6.5 mm in length, 6.22 mm in width, and 2.3 mm in height. Its ultra-low switching losses and low on-state resistance of 4.1 mΩ result in enhanced efficiency and reduced heat generation during operation.

Designed to operate reliably within a wide temperature range from -55°C up to 175°C, it meets the stringent automotive standard AEC-Q, making it suitable for demanding environments including motor control systems, dc-dc converters, and eMobility applications. The transistor has a maximum power dissipation rating of 137 W and a typical gate charge of 125 nC at Vgs, supporting fast switching speeds.

Compliant with RoHS guidelines, the transistor uses Pb-free lead plating, emphasizing environmental safety. The device's gate source voltage range is between -16 V and +5 V, with a forward voltage of approximately 1.3 V.

Enhancement mode operation ensures efficient control in power circuits. Surface mount TO-252 package enables low-profile, reliable PCB assembly. Wide automotive application suitability due to AEC-Q qualification and thermal stability.

Low gate charge and on-resistance optimize switching speed and power loss. Operating temperature range from -55°C to 175°C supports harsh environments. High power dissipation capacity for robust electrical load handling.

RoHS compliant and lead-free for eco-friendly use. Compact, standardized package dimensions facilitate versatile designs.

This product is widely applied in industrial, automotive, and power management electronic designs requiring dependable and efficient switching components. Explore more semiconductor solutions at EnvMart for your power transistor needs.

Infineon OptiMOS P Type P-Channel Power Transistor 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90P03P4L04ATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 90 A.

This power transistor has a maximum drain-source voltage rating of 30 V.

It comes in a TO-252 surface mount package type with 3 pins.

The typical gate charge is 125 nC at Vgs.

It operates reliably within a temperature range of -55°C to 175°C.

The maximum power dissipation capacity is rated at 137 W.

The on-state resistance is 4.1 mΩ, which contributes to its efficiency.

Yes, it is compliant with RoHS directives and features lead-free plating.

This model meets the AEC-Q automotive standard, ensuring reliability for automotive applications.

The forward voltage is approximately 1.3 V.

It features a P-Type channel, operating in enhancement mode.

The dimensions of the TO-252 package are 6.5 mm in length, 6.22 mm in width, and 2.3 mm in height.

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