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Infineon CoolMOS CP N-Channel MOSFET, 23 A Continuous Drain Current, 550 V Drain Source Voltage IPA50R140CPXKSA1

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Infineon CoolMOS CP N-Channel MOSFET, 23 A Continuous Drain Current, 550 V Drain Source Voltage IPA50R140CPXKSA1

Name: Infineon CoolMOS CP N-Channel MOSFET, 23 A Continuous Drain Current, 550 V Drain Source Voltage IPA50R140CPXKSA1
Brand: Infineon
SKU: 226432
Price: 3.09 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	9.83mm
Length	10.65mm
Model	IPA50R140CPXKSA1
Width	4.85mm
Mount Type	Through Hole
Series	CoolMOS CP
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	23A
Maximum Drain Source Voltage Vds	550V
Maximum Drain Source Resistance Rds	140mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	34W
Typical Gate Charge Qg @ Vgs	48nC
Maximum Gate Source Voltage Vgs	-20, +20V

Key Features

High-performance CoolMOS CP series MOSFET for power efficiency.
Enhancement mode N-channel semiconductor for switching applications.
Low maximum drain source resistance of 140 milliohm for reduced losses.
Supports maximum power dissipation of 34 watts for reliable thermal management.
Operates within a temperature range of -55°C to 150°C for robust industrial use.
Through-hole mount type ensures secure PCB installation.
Tolerates maximum gate source voltages of -20 to +20 volts.
Typical gate charge is 48 nanocoulombs, enabling fast switching speeds.

Product Description

Infineon IPA50R140CPXKSA1 is a high-quality CoolMOS CP N-Channel MOSFET designed for efficient power switching applications. It supports a maximum continuous drain current of 23 A and a drain source voltage rating of 550 V. The device features enhancement mode operation and comes in a durable 3-pin TO-220 package suitable for through-hole mounting.

With a low maximum drain source resistance of 140 milliohm, this MOSFET reduces conduction losses, improving overall system efficiency. It can safely dissipate power up to 34 watts, ensuring stable thermal performance in demanding industrial environments. The device is rated to operate from -55°C up to 150°C, making it versatile for various temperature conditions.

Its compact physical dimensions - 10.65 mm length, 9.83 mm height, and 4.85 mm width - allow for space-efficient PCB layouts. The maximum gate-source voltage rating of -20 to +20 volts offers strong protection against voltage spikes. Typical gate charge of 48 nC facilitates rapid switching, beneficial for power converters and motor drive controls.

This MOSFET is part of Infineon's CoolMOS CP series, known for best-in-class performance, enhanced protection, and efficiency. These devices are extensively used in industrial electronics, power supplies, manufacturing equipment, and other commercial applications requiring reliable power management semiconductors.

High performance CoolMOS CP series N-channel MOSFET. Enhancement mode for efficient power switching. Low on-resistance for reduced power loss. Robust power dissipation rating for thermal stability. Wide operating temperature range for industrial environments.

Through hole mount for secure installation. Compact TO-220 3-pin package design. Wide gate voltage tolerance for voltage spike protection. Fast switching enabled by low gate charge. Ideal for industrial, manufacturing, and power management uses.

Explore our Electronics & Electricals category for a large range of power and discrete semiconductor components, including MOSFETs optimized for various industrial and laboratory applications.