$0.41
$0.40
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon SIPMOS Type P-Channel MOSFET, 260 mA, 250 V Enhancement, 4-Pin SOT-223 BSP92PH6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.6mm |
| Length | 6.5mm |
| Model | BSP92PH6327XTSA1 |
| Width | 3.5mm |
| Mount Type | Surface |
| Series | SIPMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 260mA |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 20Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.8W |
| Typical Gate Charge Qg @ Vgs | 4.3nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 83V |
Key Features
- This P-Channel enhancement mode MOSFET features a maximum drain-source resistance of 20 ohms.
- Designed for operation in temperatures ranging from -55°C to 150°C.
- Optimized with a maximum power dissipation of 1.8 W for efficient performance.
- Gate-source voltage range is -20 V to +20 V, suitable for various electronic applications.
- Compact dimensions include 6.5 mm length, 3.5 mm width, and 1.6 mm height with a surface mount design.
- Typical gate charge is 4.3 nC at gate-source voltage, enabling rapid switching.
- Forward voltage rating up to 83 V adds robustness for power management circuits.
- AEC-Q101 automotive qualification ensures reliability for automotive and industrial uses.
Product Description
Infineon BSP92PH6327XTSA1 SIPMOS Type P-Channel MOSFET provides a precision enhancement mode transistor solution suitable for industrial, automotive, and electronic applications. With a continuous drain current capacity of 260 mA and a drain-source voltage rating of 250 V, this MOSFET in a 4-pin SOT-223 package supports efficient low-power switching operations.
Its low on-resistance of 20 ohms and a maximum power dissipation of 1.8 W enable reliable power management and thermal handling. The device operates effectively within a temperature range from -55°C up to 150°C, making it resilient in diverse environmental conditions.
The maximum gate-source voltage of ±20 V and typical gate charge of 4.3 nC allow for responsive gate control and fast switching speeds. Its compact surface mount package with dimensions 6.5 mm length, 3.5 mm width, and 1.6 mm height facilitate easy integration in high-density printed circuit boards.
With an AEC-Q101 automotive standard qualification, the BSP92PH6327XTSA1 MOSFET is suited for automotive electronics, telecommunications, DC/DC converters, and e-mobility applications, providing robustness and high reliability.
This MOSFET supports continuous conduction with low losses, enhancing system efficiency. The compact SOT-223 package allows for space-saving implementations in PCB layouts. Designed for surface mount technology, it simplifies manufacturing and assembly processes.
Its Pb-free lead plating and RoHS compliance meet environmental and safety regulations. Suitable for low power switching applications and power management in automotive and industrial electronics.
Selecting the Infineon BSP92PH6327XTSA1 ensures high-quality performance consistent with rigorous semiconductor standards. This MOSFET enhances circuit efficiency and reliability in demanding applications.
Explore more MOSFET devices and semiconductor solutions on EnvMart for comprehensive coverage of power management and discrete semiconductors.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for the BSP92PH6327XTSA1 is 260 mA.
This model has a maximum drain-source voltage rating of 250 V.
The maximum drain-source resistance for this MOSFET is 20 ohms.
It operates effectively within a temperature range of -55°C to 150°C.
The dimensions of the SOT-223 package are 6.5 mm in length, 3.5 mm in width, and 1.6 mm in height.
The maximum power dissipation for the BSP92PH6327XTSA1 is 1.8 W.
The typical gate charge is 4.3 nC at gate-source voltage.
The maximum gate-source voltage is ±20 V.
This model is qualified under the AEC-Q101 automotive standard.
It is suitable for automotive electronics, telecommunications, DC/DC converters, and e-mobility applications.
Yes, the BSP92PH6327XTSA1 features Pb-free lead plating and is RoHS compliant.
This MOSFET is a Type P channel device.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$19.84
$19.24
-3%
New
Recently Viewed Products
$0.41
$0.40
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent