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DiodesZetex NPN Transistor 2 A 20 V 3-Pin SOT-23 Surface Mount ZXTN25020DFLTA

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 3.05mm
Length 0.53mm
Model ZXTN25020DFLTA
Mount Type Surface
Series ZXTNX
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 20V
Minimum DC Current Gain hFE 80
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 7V
Maximum Collector Base Voltage VCBO 100V
Maximum Power Dissipation Pd 350mW
Maximum DC Collector Current Idc 2A
Transistor Configuration Single
Maximum Transition Frequency ft 215MHz

Key Features

  • Maximum DC collector current of 2 amperes.
  • Maximum collector-emitter voltage of 20 volts.
  • Surface mount package type SOT-23 with 3 pins.
  • High transition frequency of 215 MHz.
  • Operating temperature range from -55°C to 150°C for reliable performance.
  • Minimum DC current gain of 80 ensures efficient amplification.
  • Maximum power dissipation capability of 350 mW.
  • NPN transistor polarity designed for switching and amplification applications.

Product Description

DiodesZetex ZXTN25020DFLTA is a high-performance NPN bipolar transistor designed for a wide range of electronic applications. It features a maximum continuous collector current of 2 A and a maximum collector-emitter voltage rating of 20 V, packaged in a compact 3-Pin SOT-23 surface mount configuration.

This transistor offers high frequency performance with a maximum transition frequency of 215 MHz, suitable for high-speed switching and amplification circuits. It supports a minimum DC current gain (hFE) of 80, ensuring efficient current amplification, and can dissipate power up to 350 milliwatts safely.

Operating over a broad temperature range from -55°C to 150°C, the ZXTN25020DFLTA is suitable for demanding industrial and consumer electronics environments. Its compact dimensions (3.05 mm height and 0.53 mm length) allow for space-saving PCB layouts in modern electronic assemblies.

The device is surface mountable, easing automated placement in manufacturing lines, and providing reliable mechanical and electrical connections. Common applications include switching devices, amplification stages in audio, communication, and power management circuits.

Manufactured in China to meet industry standards, the ZXTN25020DFLTA ensures quality and dependable operation for engineering, industrial, and electronic prototyping needs. Maximum collector current of 2 A allows robust switching capabilities.

Compact SOT-23 3-pin package enables efficient PCB space utilization. High frequency operation up to 215 MHz supports a variety of signal processing tasks. Wide temperature range suitability extends application scope in harsh environments.

Surface mount design compatible with automated assembly processes. Multipurpose use including electronics, industrial controls, and communication devices. Low power dissipation rating emphasizes efficient thermal management.

Reliable NPN transistor configuration for standard electronic circuits. Explore the wide range of semiconductor components at EnvMart for industrial electronics, prototyping, and manufacturing solutions.

Explore more products in our Bipolar Transistors category.

DiodesZetex NPN Transistor 2 A 20 V 3-Pin SOT-23 Surface Mount ZXTN25020DFLTA
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Frequently Asked Questions

The maximum DC collector current for this model is 2 A.

The maximum collector-emitter voltage rating is 20 V.

It has a maximum transition frequency of 215 MHz, suitable for high-speed applications.

This model operates within a temperature range from -55°C to 150°C.

The minimum DC current gain (hFE) is 80, ensuring efficient amplification.

It can safely dissipate power up to 350 mW.

The ZXTN25020DFLTA is packaged in a 3-Pin SOT-23 surface mount configuration.

The dimensions are 3.05 mm in height and 0.53 mm in length.

This model has an NPN transistor polarity, designed for switching and amplification applications.

The maximum emitter-base voltage (VEBO) is 7 V, and the maximum collector-base voltage (VCBO) is 100 V.

It is suitable for switching devices, amplification stages in audio, communication, and power management circuits.

This transistor is manufactured in China to meet industry standards.

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