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DiodesZetex General Purpose PNP Transistor 5.5 A, 60 V, 4-Pin SOT-223 ZX5T951GTA
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.65mm |
| Length | 6.55mm |
| Model | ZX5T951GTA |
| Width | 7.1mm |
| Mount Type | Surface |
| Series | ZX5T |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | -60V |
| Minimum DC Current Gain hFE | 10 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -7V |
| Maximum Collector Base Voltage VCBO | -100V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 3W |
| Maximum DC Collector Current Idc | -5.5A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 120MHz |
Key Features
- This transistor uses a 4-pin SOT-223 surface mount package.
- It features a maximum power dissipation rating of 3 watts.
- The device has a maximum transition frequency of 120 MHz suitable for high-frequency switching.
- Designed to operate within a temperature range of -55°C to 150°C.
- It complies with automotive standard AEC-Q101 for reliability in automotive applications.
- The transistor offers a minimum current gain (hFE) of 10.
- The package dimensions are 6.55 mm length, 7.1 mm width, and 1.65 mm height.
- The transistor polarity is PNP suitable for standard electronic circuit applications.
Product Description
DiodesZetex ZX5T951GTA is a robust general purpose PNP bipolar transistor designed for various electronic and power control applications. It supports a maximum collector current of 5.5 A and a maximum collector-emitter voltage of 60 V, making it suitable for medium power switching and amplification tasks.
Housed in a compact 4-pin SOT-223 surface mount package, it offers efficient thermal performance with a power dissipation ceiling of 3 watts. The device is engineered to operate reliably in harsh industrial and automotive environments with an operating temperature range from -55°C to 150°C.
The transistor supports high-frequency applications up to 120 MHz due to its maximum transition frequency rating, making it well-suited for switching and amplification in demanding circuit designs.
This component meets the automotive standard AEC-Q101, ensuring enhanced durability and reliability for automotive and industrial electronics.
The ZX5T951GTA offers a minimum DC current gain (hFE) of 10, providing dependable current amplification. Its compact dimensions (6.55 mm length, 7.1 mm width, 1.65 mm height) allow for versatile PCB integration in both consumer and industrial-grade electronics.
This transistor employs a single transistor configuration with a PNP polarity suitable for a wide range of circuits. The package type SOT-223 supports surface mount technology enabling automated PCB assembly. Maximum collector base voltage rating is -100 V, and maximum emitter base voltage rating is -7 V.
The 4-pin design facilitates efficient electrical connections to the surrounding circuit.
This transistor is ideal for industrial control, automotive electronics, power management, and signal amplification tasks where reliable and efficient PNP transistor performance is required.
Explore the DiodesZetex product range on EnvMart for more advanced semiconductor components and trusted electronic materials.
Explore more products in our Bipolar Transistors category.
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Frequently Asked Questions
The maximum collector current for this model is 5.5 A.
The maximum collector-emitter voltage rating is 60 V.
This transistor comes in a 4-pin SOT-223 surface mount package.
It operates within a temperature range of -55°C to 150°C.
The maximum power dissipation rating for this unit is 3 watts.
The minimum DC current gain (hFE) is 10.
The maximum transition frequency is 120 MHz, suitable for high-frequency applications.
Yes, it complies with automotive standard AEC-Q101, ensuring reliability in automotive applications.
The dimensions are 6.55 mm in length, 7.1 mm in width, and 1.65 mm in height.
This model employs a single transistor configuration with PNP polarity.
The maximum emitter-base voltage rating is -7 V.
It is suitable for industrial control, automotive electronics, power management, and signal amplification tasks.
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