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DiodesZetex Switching Diode, Single Silicon Junction, 1 A Forward Current, 1000 V DO-41 UF1007-T

Category Switching Diode Brand DiodesZetex Condition New

Specifications

Country of Origin China
Diameter 2.72mm
Brand DiodesZetex
Height 2.72mm
Length 5.21mm
Model UF1007-T
Width 2.72mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type DO-41
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 30A
Maximum Forward Voltage Vf 1.7V
Peak Reverse Recovery Time trr 75ns
Maximum Forward Current If 1A
Maximum Peak Reverse Repetitive Voltage Vrrm 1000V

Key Features

  • Silicon junction diode designed for reliable switching applications.
  • Maximum forward current of 1 ampere suitable for various electronic circuits.
  • Peak reverse repetitive voltage rating of 1000 volts.
  • Package type DO-41 with two pins for through-hole mounting.
  • Peak reverse recovery time of 75 nanoseconds for efficient switching performance.
  • Operating temperature range from -65°C to 150°C for versatile environment use.
  • Maximum forward voltage of 1.7 volts ensuring low power loss.
  • Peak non-repetitive forward surge current of 30 amperes for transient conditions.

Product Description

DiodesZetex UF1007-T is a single silicon junction switching diode, designed professionally for efficient switching and rectification applications. Rated for a maximum forward current of 1 ampere and a peak repetitive reverse voltage of 1000 volts, it suits a wide range of industrial and electronic devices requiring reliable performance.

The diode comes in a standard DO-41 through-hole package with 2 pins, offering an optimal balance between size and ease of mounting. Its peak reverse recovery time of 75 nanoseconds ensures fast switching speeds, essential for power electronics and signal processing circuits.

Operating comfortably over a temperature range from -65°C to 150°C, the UF1007-T diode is capable of functioning reliably in demanding thermal environments common in manufacturing, automotive electronics, and power management systems.

This diode features a maximum forward voltage of 1.7 volts, minimizing conduction losses and increasing overall efficiency in circuits. It withstands peak non-repetitive forward surge currents of up to 30 amperes, providing robustness against transient overload conditions.

Compact in size, the product measures approximately 5.21 mm in length and 2.72 mm in diameter, making it adaptable to various board layouts and designs. Ideal for usage in industrial electronics, consumer devices, power supplies, and switching regulators, this diode supports robust and efficient circuit design requirements.

Silicon junction diode designed for reliable switching applications. Maximum forward current of 1 ampere suitable for various electronic circuits. Peak reverse repetitive voltage rating of 1000 volts. Package type DO-41 with two pins for through-hole mounting.

Peak reverse recovery time of 75 nanoseconds for efficient switching performance. Operating temperature range from -65°C to 150°C for versatile environment use. Maximum forward voltage of 1.7 volts ensuring low power loss.

Peak non-repetitive forward surge current of 30 amperes for transient conditions. Compact dimensions approximately 5.21 mm length and 2.72 mm diameter. Manufactured in China adhering to standard semiconductor quality. Explore the comprehensive selection of DiodesZetex Switching Diodes and related semiconductors at EnvMart for industrial, commercial, and laboratory applications.

DiodesZetex Switching Diode, Single Silicon Junction, 1 A Forward Current, 1000 V DO-41 UF1007-T
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Frequently Asked Questions

The maximum forward current of the UF1007-T diode is 1 ampere.

It has a peak reverse repetitive voltage rating of 1000 volts.

This diode comes in a DO-41 package type with two pins for through-hole mounting.

The peak reverse recovery time is 75 nanoseconds, ensuring efficient switching performance.

The operating temperature range for the UF1007-T is from -65°C to 150°C.

The maximum forward voltage is 1.7 volts, which helps minimize power loss.

The diode can withstand a peak non-repetitive forward surge current of up to 30 amperes.

The diode measures approximately 5.21 mm in length and 2.72 mm in diameter.

The UF1007-T features a single diode configuration.

The UF1007-T is manufactured in China.

This diode is suitable for various electronic circuits, including industrial electronics and power management systems.

The UF1007-T diode has a pin count of 2.

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