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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 16.51mm |
| Length | 10.66mm |
| Model | SBR20A200CT |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Diode Configuration | Common Cathode |
| Peak Non-Repetitive Forward Surge Current Ifsm | 180A |
| Maximum Forward Voltage Vf | 960mV |
| Peak Reverse Recovery Time trr | 30ns |
| Maximum Forward Current If | 20A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 200V |
DiodesZetex SBR20A200CT Silicon Junction Switching Diode is built with a common cathode configuration and housed in a TO-220 3-pin package. It supports a continuous maximum forward current of 20 Amperes and a peak reverse repetitive voltage of 200 Volts, making it ideal for power rectification and switching applications in electronic circuits.
The diode features a fast peak reverse recovery time of 30 nanoseconds, enabling efficient switching speeds. Its maximum forward voltage drop of 960 millivolts helps reduce power losses during conduction. The device is rated to operate reliably across a wide temperature range from -65°C to 175°C, ensuring stability in challenging industrial and commercial environments.
With a peak non-repetitive forward surge current of 180 Amperes, this diode can handle transient overload conditions safely. The product is designed for through-hole mounting and measures 10.66 mm in length, 4.82 mm in width, and 16.51 mm in height, providing a compact footprint suitable for various PCB designs.
This diode is manufactured in China and does not carry automotive certification, aligning with general-purpose power electronics applications. The package supports efficient thermal management with the TO-220 form factor.
This diode supports a maximum forward current of 20 Amperes, suitable for high power applications. Its peak reverse repetitive voltage is rated at 200 Volts, ensuring reliable blocking capability. Featuring a peak reverse recovery time of 30 nanoseconds, it enables fast switching performance.
The maximum forward voltage drop of 960 millivolts optimizes energy efficiency in circuits. Operating temperature ranges from -65°C to 175°C, allowing use in harsh environments. Peak non-repetitive forward surge current is 180 Amperes for transient overloads.
Compact TO-220 package with dimensions: length 10.66 mm, width 4.82 mm, and height 16.51 mm. Pin count of 3 pins supports common cathode configuration for rectifier circuits. Designed for through-hole mounting for secure and reliable PCB installation.
Manufactured in China meeting standard quality without automotive certification.
This diode is suitable for industrial electronics, power supplies, manufacturing electronics, laboratory testing, and general switching applications. Explore more Discrete Semiconductors and Switching Diodes at EnvMart for reliable electronic components tailored to your requirements.
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