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DiodesZetex Small Signal NPN Transistor 600 mA, 160 V, 300 MHz, 3-Pin SOT-23 MMBT5551-7-F

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model MMBT5551-7-F
Width 2.5mm
Mount Type Surface
Series MMBT5551
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 160V
Minimum DC Current Gain hFE 80
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 180V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 600mA
Transistor Configuration Single
Maximum Transition Frequency ft 300MHz

Key Features

  • This transistor offers a maximum power dissipation of 300 mW.
  • It features a transition frequency (ft) of 300 MHz suitable for high frequency applications.
  • Operates within temperature range of -55°C to 150°C providing reliability.
  • The minimum DC current gain (hFE) is 80, ensuring efficient amplification.
  • Automotive standard compliance with AEC-Q101 for enhanced quality assurance.
  • Its compact dimensions are 3 mm length, 2.5 mm width, and 1.1 mm height.
  • Designed for surface mounting on PCBs for easy assembly.
  • It is a single transistor NPN configuration useful in various electronic circuits.

Product Description

DiodesZetex MMBT5551-7-F is a high-quality small signal NPN transistor designed for electronic industrial applications requiring controlled current and voltage amplification. It is rated for a maximum collector current of 600 mA and can withstand collector-emitter voltages up to 160 V, making it versatile for different circuit designs.

The transistor supports high frequency operation with a transition frequency (ft) of 300 MHz, suitable for RF and switching tasks. With a power dissipation of 300 mW and a broad operating temperature range from -55°C to 150°C, it ensures reliable performance in demanding environmental conditions.

The device features a minimum DC current gain (hFE) of 80, enhancing amplification efficacy in analog and digital circuits. It comes in a surface mountable 3-pin SOT-23 package, facilitating compact and efficient PCB designs.

Compliance with automotive standard AEC-Q101 confirms its suitability for robust automotive and industrial usage. This transistor offers a maximum power dissipation of 300 mW. It features a transition frequency of 300 MHz suitable for high frequency applications.

Operates within temperature range of -55°C to 150°C providing reliability. The minimum DC current gain is 80, ensuring efficient amplification. Automotive standard compliance with AEC-Q101 for enhanced quality assurance.

Compact package size: 3 mm length, 2.5 mm width, 1.1 mm height. Designed for surface mount technology (SMT) on PCBs. NPN single transistor configuration ideal for various electronic circuits. This transistor is ideal for use in industrial electronics, communication devices, power control units, automotive electronics, and consumer electronic products.

Explore more from the Bipolar Transistors category at EnvMart for advanced semiconductor solutions.

DiodesZetex Small Signal NPN Transistor 600 mA, 160 V, 300 MHz, 3-Pin SOT-23 MMBT5551-7-F
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Frequently Asked Questions

The maximum collector current for this transistor is 600 mA.

The transition frequency (ft) of the MMBT5551-7-F is 300 MHz, making it suitable for high frequency applications.

This model has a maximum power dissipation of 300 mW.

The dimensions of the SOT-23 package are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

It operates within a temperature range of -55°C to 150°C.

The minimum DC current gain (hFE) is 80, which enhances amplification efficiency.

The maximum collector-emitter voltage (Vceo) is 160 V.

Yes, it complies with the automotive standard AEC-Q101 for enhanced quality assurance.

This model is designed for surface mounting on PCBs.

The maximum emitter-base voltage (VEBO) is 6 V.

It is a single NPN transistor configuration.

The maximum collector-base voltage (VCBO) is 180 V.

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