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DiodesZetex PNP Transistor 600 mA, 150 V, 3-Pin SOT-23 MMBT5401-7-F

Category Semiconductors Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model MMBT5401-7-F
Width 2.5mm
Mount Type Surface
Series MMBT
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -150V
Minimum DC Current Gain hFE 50
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -160V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc -600mA
Transistor Configuration Single
Maximum Transition Frequency ft 300MHz

Key Features

  • This transistor is surface-mounted and configured as a single PNP device.
  • Maximum power dissipation is 300 mW, making it suitable for moderate power applications.
  • It operates reliably in temperatures ranging from -55°C to 150°C.
  • The transistor features a high transition frequency of 300 MHz for fast switching applications.
  • The minimum DC current gain (hFE) is 50, ensuring adequate amplification performance.
  • It complies with automotive standard AEC-Q101, certifying it for automotive use.
  • The compact dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height support space-saving PCB designs.

Product Description

DiodesZetex MMBT5401-7-F is a small signal PNP bipolar transistor designed for a wide range of electronic applications requiring moderate current and voltage ratings.

This transistor supports a maximum DC collector current of 600 mA and a collector emitter voltage rating of 150 V, making it ideal for switching and amplification in electronic circuits.

The device is enclosed in a compact 3-pin SOT-23 surface-mount package, promoting easy PCB integration and efficient use of board space.

With a maximum power dissipation of 300 mW and high-frequency response up to 300 MHz, the MMBT5401-7-F transistor is suitable for high-speed switching and signal amplification in industrial, automotive, and consumer electronics.

It complies with the AEC-Q101 automotive standard, qualifying it for automotive electronics applications requiring enhanced reliability and thermal endurance. This transistor offers a minimum DC current gain (hFE) of 50.

It operates effectively across a broad temperature range from -55°C to 150°C, suitable for harsh environments. The transistor's compact physical dimensions of 3 mm by 2.5 mm by 1.1 mm facilitate design flexibility in densely packed circuits.

The MMBT5401-7-F transistor finds applications in industrial automation, automotive controls, consumer electronics devices, and general-purpose amplification and switching. Explore more semiconductor and transistor components in the Electronics & Electricals category on EnvMart for your advanced electronic circuit design needs.

Explore more products in our Semiconductors category.

DiodesZetex PNP Transistor 600 mA, 150 V, 3-Pin SOT-23 MMBT5401-7-F
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Frequently Asked Questions

The maximum DC collector current for this model is 600 mA.

It operates effectively within a temperature range of -55°C to 150°C.

The maximum collector-emitter voltage rating is 150 V.

The MMBT5401-7-F is enclosed in a 3-pin SOT-23 surface-mount package.

The minimum DC current gain (hFE) is 50, ensuring adequate amplification performance.

The maximum power dissipation is 300 mW, making it suitable for moderate power applications.

It complies with the AEC-Q101 automotive standard, certifying it for automotive use.

This transistor features a high transition frequency of 300 MHz, suitable for fast switching applications.

The dimensions are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

It is a single PNP bipolar transistor designed for a wide range of electronic applications.

The maximum emitter-base voltage (VEBO) is -5 V.

This transistor is suitable for applications in industrial automation, automotive controls, and consumer electronics devices.

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