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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.1mm |
| Length | 2.2mm |
| Model | MMDT5401-7-F |
| Width | 2.2mm |
| Mount Type | Surface |
| Series | MMDT |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-363 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Maximum Collector Emitter Voltage Vceo | -150V |
| Minimum DC Current Gain hFE | 50 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -5V |
| Maximum Collector Base Voltage VCBO | -160V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 200mW |
| Maximum DC Collector Current Idc | -200mA |
| Transistor Configuration | Isolated |
| Maximum Transition Frequency ft | 300MHz |
DiodesZetex MMDT5401-7-F is a high-quality small signal PNP transistor designed for discrete semiconductor electronics applications. Featuring a maximum DC collector current of -200 mA and a maximum collector emitter voltage of -150 V, this transistor is housed in a compact 6-Pin SOT-363 surface mount package, making it suitable for space-constrained industrial and commercial electronic devices.
This transistor provides isolated transistor configuration and a maximum power dissipation of 200 mW, ideal for low-power switching and amplification tasks in circuits. Its minimum DC current gain (hFE) of 50 and maximum transition frequency of 300 MHz deliver reliable performance in analog and high-frequency switching applications, including automotive and industrial use.
Operating temperatures range from -55°C to 150°C, enabling stable function in extreme environmental conditions encountered in manufacturing, automotive electronics, laboratory instruments, and embedded systems. The transistor’s compact dimensions of 2.2 mm length and width and 1.1 mm height optimize PCB utilization, supporting efficient design and assembly workflows.
The MMDT5401-7-F complies with the automotive standard AEC-Q101, reflecting rigorous quality and reliability standards required for automotive electronics components. Its origin from China assures global manufacturing standards and supply chain consistency.
Isolated transistor configuration enhances circuit design flexibility. 200 mW maximum power rating supports consistent low power applications. High minimum DC current gain ensures effective signal amplification. Wide operating temperature range suits harsh industrial environments.
Compact SOT-363 package eases integration in miniaturized electronics. High transition frequency allows use in RF and switching circuits. Automotive grade quality with AEC-Q101 certification.
This transistor is ideally suited for industrial, automotive, electronic manufacturing, and laboratory applications requiring reliable, high-frequency PNP transistor performance. For comprehensive selection and compatible component browsing, explore more Bipolar Transistors and semiconductors within EnvMart’s extensive electronic components catalog.
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