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DiodesZetex High Voltage PNP Transistor, -500 mA DC Collector Current, -400 V Collector Emitter Voltage, 3W Power FZT958TA
Specifications
| Country of Origin | Germany |
|---|---|
| Brand | DiodesZetex |
| Height | 1.65mm |
| Length | 6.55mm |
| Model | FZT958TA |
| Width | 7.1mm |
| Mount Type | Surface |
| Series | FZT958 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | -400V |
| Minimum DC Current Gain hFE | 10 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -6V |
| Maximum Collector Base Voltage VCBO | -400V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 3W |
| Maximum DC Collector Current Idc | -500mA |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 85MHz |
| STMicroelectronics STN9360 Transistor, -500 mA PNP, -600 V, 3-Pin SOT-223Brand | STMicroelectronics |
Key Features
- Supports a maximum DC collector current of -500 mA for robust performance.
- Operates safely with a collector-emitter voltage up to -400 V.
- Constructed with a 4-pin SOT-223 package suitable for surface mounting.
- Maximum power dissipation of 3 watts for efficient thermal management.
- High transition frequency of 85 MHz ensures fast switching capabilities.
- Wide operating temperature range from -55°C to 150°C for versatile applications.
- Meets AEC-Q101 automotive standard ensuring high reliability in demanding conditions.
Product Description
DiodesZetex FZT958TA is a high voltage PNP bipolar transistor optimized for applications demanding reliable switching and amplification in industrial, automotive, and electronic circuits. Its robust design supports a maximum DC collector current of -500 mA and withstands collector-emitter voltages of up to -400 V, making it suitable for power management tasks.
The transistor comes in a 4-pin SOT-223 package with surface mount technology compatibility, offering ease of use in compact electronic designs. It dissipates a maximum power of 3 W and features a high transition frequency of 85 MHz, enabling rapid switching and efficient high-frequency operation.
Designed to operate within a wide temperature range from -55°C to 150°C, the FZT958TA meets the AEC-Q101 automotive standard, ensuring dependable performance in rigorous environmental conditions. Its compact physical dimensions (6.55 mm length, 7.1 mm width, 1.65 mm height) facilitate integration into space-constrained circuits.
This transistor is ideal for industrial electronics, automotive systems, power regulation circuits, and high-frequency switching applications where durability and performance are critical.
Supports a maximum DC collector current of -500 mA for robust performance. Operates safely with a collector-emitter voltage up to -400 V. Constructed with a 4-pin SOT-223 package suitable for surface mounting. Maximum power dissipation of 3 watts for efficient thermal management.
High transition frequency of 85 MHz ensures fast switching capabilities. Wide operating temperature range from -55°C to 150°C for versatile applications. Meets AEC-Q101 automotive standard ensuring high reliability in demanding conditions.
Compact dimensions: Length 6.55 mm, Width 7.1 mm, Height 1.65 mm.
Choose the DiodesZetex FZT958TA for a dependable, high performance PNP transistor that suits demanding industrial and automotive electronic designs. Explore more semiconductor components on EnvMart for enhanced system solutions.
Explore more products in our Bipolar Transistors category.
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Frequently Asked Questions
The maximum DC collector current for this model is -500 mA.
It operates safely with a collector-emitter voltage rating of up to -400 V.
The maximum power dissipation for this transistor is 3 watts.
This model features a high transition frequency of 85 MHz, enabling fast switching capabilities.
The dimensions are 6.55 mm in length, 7.1 mm in width, and 1.65 mm in height.
It is constructed in a 4-pin SOT-223 package suitable for surface mounting.
The FZT958TA operates within a wide temperature range from -55°C to 150°C.
This transistor meets the AEC-Q101 automotive standard, ensuring high reliability in demanding conditions.
The minimum DC current gain (hFE) for this model is 10.
The maximum emitter-base voltage (VEBO) is -6 V.
It is ideal for industrial electronics, automotive systems, power regulation circuits, and high-frequency switching applications.
The configuration of this transistor is single.
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