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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.1mm |
| Length | 3mm |
| Model | DZT5551-13 |
| Width | 2.5mm |
| Mount Type | Surface |
| Series | DZT5551 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | 160V |
| Minimum DC Current Gain hFE | 30 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 180V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 1W |
| Maximum DC Collector Current Idc | 600mA |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 300MHz |
DiodesZetex DZT5551-13 is a general-purpose NPN bipolar transistor designed with a 600 mA maximum collector current and a collector-emitter voltage rating of up to 160 V. Housed in a compact 4-pin SOT-223 surface-mount package, this transistor is suitable for applications requiring efficient switching and amplification in industrial, automotive, and consumer electronics sectors.
The transistor operates reliably across a broad temperature range from -55°C to 150°C, supporting high-frequency applications up to 300 MHz thanks to its maximum transition frequency (ft). It features a minimum current gain (hFE) of 30, ensuring effective signal amplification. With a maximum power dissipation of 1 watt, it is optimized for low power consumption in compact device designs.
Manufactured to conform to the AEC-Q101 automotive standard, DZT5551-13 ensures robust performance and reliability in automotive electronic systems. The device's 4-pin SOT-223 surface-mount package enables easy integration on printed circuit boards, enhancing production efficiency and assembly automation.
Key technical features include a maximum collector-base voltage rating of 180 V and maximum emitter-base voltage of 6 V, ensuring stable operation within specified electrical limits. The transistor's physical dimensions are 3 mm in length, 2.5 mm in width, and 1.1 mm in height, making it suitable for compact electronic layouts.
This transistor is ideal for industrial electronics, automotive control systems, power management circuits, and other applications requiring reliable switching and amplification under harsh conditions.
The transistor supports a maximum DC collector current of 600 mA. It features a maximum power dissipation of 1 watt, suitable for low power applications. Minimum DC current gain (hFE) is 30 ensuring adequate amplification.
The device operates within a temperature range of -55°C to 150°C. Maximum transition frequency (ft) is 300 MHz, enabling high-frequency operation. Manufactured to meet automotive AEC-Q101 standard for reliability. The physical package dimensions are 3 mm length, 2.5 mm width, and 1.1 mm height.
Pin count for the transistor is 4, suitable for standard circuit designs. Designed for single transistor configuration with NPN polarity. Explore more electronics and semiconductor components on EnvMart for your design and manufacturing needs.
Explore more products in our Bipolar Transistors category.
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